公开(公告)号：US10908322B2

公开(公告)日：2021-02-02

申请号：US13823971

申请日：2011-09-06

Applicant: Mayu Youki ,  Tomoyuki Horio ,  Yoshihiro Nishimura ,  Mariko Hayashi ,  Yuya Inomata ,  Hiroshi Nakamura

Inventor： Mayu Youki ,  Tomoyuki Horio ,  Yoshihiro Nishimura ,  Mariko Hayashi ,  Yuya Inomata ,  Hiroshi Nakamura

IPC: G02B1/14 ,  G02B1/16 ,  G02B1/18 ,  G02B1/10 ,  G02B5/30 ,  G02B27/00

Abstract: The claimed invention provides an antistatic hard coat film that is extremely excellent in white muddiness resistance and antistatic properties and sufficiently prevents an interference fringe pattern. The claimed invention provides an antistatic hard coat film including a triacetyl cellulose substrate and a hard coat layer formed on the triacetyl cellulose substrate, the hard coat layer including an antistatic agent, a (meth)acrylate resin, and a polymer of a (meth)acrylate monomer, the triacetyl cellulose substrate including a permeation layer formed by permeation of the (meth)acrylate monomer from the hard coat layer side of the interface toward the opposite side of the hard coat layer, the antistatic hard coat film satisfying Formulas (1), (2), and (3): 3 μm≤T≤18 μm  Formula (1) 0.3T≤t≤0.9T  Formula (2) 2 μm≤T−t≤11 μm  Formula (3) where T denotes the total thickness (μm) of the permeation layer and the hard coat layer, and t denotes the thickness (μm) of the permeation layer.

公开(公告)号：US09093182B2

公开(公告)日：2015-07-28

申请号：US13266489

申请日：2010-04-27

Applicant: Takanari Inatomi ,  Ayano Ebihara ,  Hiroshi Nakamura ,  Hideo Kobayashi ,  Katsushi Hasegawa

Inventor： Takanari Inatomi ,  Ayano Ebihara ,  Hiroshi Nakamura ,  Hideo Kobayashi ,  Katsushi Hasegawa

IPC: G21C15/00 ,  G21C1/32 ,  G21C1/02 ,  G21C15/02 ,  G21C15/247 ,  G21C11/02

CPC classification number: G21C1/322 ,  G21C1/02 ,  G21C11/022 ,  G21C15/02 ,  G21C15/247 ,  Y02E30/34

Abstract: A fast reactor 1 includes: a reactor vessel 7 accommodating therein a core 2 and a primary coolant 21; a core support 13 supporting the core 2 from below; and a bulkhead 6 disposed on the core support 13, the bulkhead 6 extending upward and surrounding the core 2 from a lateral side. Between an inner surface of the reactor vessel 7 and the bulkhead 6, there is disposed an intermediate heat exchanger 15 configured to cool the primary coolant 21, and an electromagnetic pump 14 configured to pressurize the cooled primary coolant 21. A neutron shield 8 supported by an upper supporting plate 29 from above is disposed below the electromagnetic pump 14. The upper supporting plate 29 has an opening 29a. Between an outlet 14b of the electromagnetic pump 14 and the upper supporting plate 29, there is disposed a coolant guide mechanism 17 configured to guide the pressurized primary coolant 21 from the electromagnetic pump 14 to the neutron shield through the opening 29a of the upper supporting plate 29.

Abstract translation: 快堆1包括：反应容器7，容纳有芯2和主冷却剂21; 核心支撑13支撑下面的核心2; 以及设置在芯支撑件13上的隔板6，隔板6从外侧向上延伸并围绕芯2。 在反应堆容器7的内表面和隔板6之间设置有构造成冷却主冷却剂21的中间热交换器15和构造成对冷却的一次冷却剂21加压的电磁泵14.中子屏蔽8由 来自上方的上支撑板29设置在电磁泵14的下方。上支撑板29具有开口29a。 在电磁泵14的出口14b和上支撑板29之间设置有冷却剂引导机构17，其构造成通过上支撑板的开口29a将加压的一次冷却剂21从电磁泵14引导到中子屏蔽 29。

公开(公告)号：US20140000434A1

公开(公告)日：2014-01-02

申请号：US14004949

申请日：2012-03-15

Applicant: Masahiro Hasegawa ,  Hiroyasu Toyooka ,  Hiroshi Nakamura

Inventor： Masahiro Hasegawa ,  Hiroyasu Toyooka ,  Hiroshi Nakamura

IPC: G02B6/25 ,  B26D3/08

CPC classification number: G02B6/25 ,  B26D3/08 ,  B26D7/2635 ,  Y10S83/955 ,  Y10T83/0393 ,  Y10T225/321

Abstract: A slider is attached to a cutter main body of an optical fiber cutter in a forward/backward movable state. A round blade member for making a scratch in an optical fiber is attached to the slider in a rotatable state. An operation lever pin for changing over rotation operation modes from one to another is attached to one end side of a pin member which penetrates a wall of the cutter main body. The rotation operation modes include a non-rotation mode for preventing the round blade member from being rotated and a continuous rotation mode for rotating the round blade member by a predetermined angle with every backward movement of the slider.

Abstract translation: 滑块以向前/向后移动状态附接到光纤切割器的切割器主体。 用于在光纤中划伤的圆形刀片构件以可旋转状态附接到滑块。 用于将旋转操作模式从一个转换到另一个的操作杆销安装在穿过刀具主体的壁的销构件的一端侧。 旋转操作模式包括用于防止圆形刀片构件旋转的非旋转模式以及用于使滑动件每次向后移动使圆形刀片构件旋转预定角度的连续旋转模式。

公开(公告)号：US20130329297A1

公开(公告)日：2013-12-12

申请号：US13979572

申请日：2012-01-16

Applicant: Mariko Hayashi ,  Tomoyuki Horio ,  Yoshihiro Nishimura ,  Yuya Inomata ,  Hiroshi Nakamura ,  Mayu Youki

Inventor： Mariko Hayashi ,  Tomoyuki Horio ,  Yoshihiro Nishimura ,  Yuya Inomata ,  Hiroshi Nakamura ,  Mayu Youki

IPC: G02B1/11

CPC classification number: G02B1/111 ,  C03C21/002 ,  C08J5/18 ,  C08J5/24 ,  C08J2300/20 ,  C08J2333/08 ,  C08K5/523 ,  C08L1/10 ,  C08L63/00 ,  C08L2205/02 ,  G02B1/04 ,  G02B5/3033 ,  G02B5/305 ,  G02B27/0006 ,  G02F1/1335 ,  G02F1/133502

Abstract: The claimed invention provides an antireflection film including a light-transmitting substrate, a hard coat layer, and a low-refractive-index layer, the hard coat layer and the low-refractive-index layer being formed on the light-transmitting substrate, the low-refractive-index layer including a (meth)acrylic resin, hollow silica particles, reactive silica particles, and two kinds of antifouling agents, the hollow silica particles having an average particle size of 40 to 80 nm and a blending ratio to the (meth)acrylic resin, represented by a ratio: Amount of hollow silica particles/Amount of (meth)acrylic resin, of 0.9 to 1.4, the amount of the reactive silica particles being 5 to 60 parts by mass based on 100 parts by mass of the (meth) acrylic resin, the antifouling agents including an antifouling agent that contains a fluorine compound and an antifouling agent that contains a fluoro-silicone compound.

Abstract translation: 所要求保护的发明提供了一种抗反射膜，其包括透光基板，硬涂层和低折射率层，硬涂层和低折射率层形成在透光基板上， 包含（甲基）丙烯酸树脂，中空二氧化硅颗粒，反应性二氧化硅颗粒和两种防污剂的低折射率层，平均粒径为40至80nm的中空二氧化硅颗粒和与（ 甲基）丙烯酸树脂，以中空二氧化硅颗粒的量/（甲基）丙烯酸树脂的量为0.9〜1.4，相对于100质量份的反应性二氧化硅颗粒的量为5〜60质量份 （甲基）丙烯酸树脂，防污剂包括含氟化合物的防污剂和含氟硅氧烷化合物的防污剂。

公开(公告)号：US08593162B2

公开(公告)日：2013-11-26

申请号：US12637237

申请日：2009-12-14

Applicant: Hiroshi Nakamura ,  Akikazu Uchida

Inventor： Hiroshi Nakamura ,  Akikazu Uchida

IPC: G01R27/26

CPC classification number: F02D41/0025 ,  F02D19/0628 ,  F02D19/0634 ,  F02D19/084 ,  F02D2200/0606 ,  F02D2200/0611 ,  G01N33/2852 ,  Y02T10/36

Abstract: An object of the invention is to provide a fuel-aspect sensor having higher detection accuracy. A first electrode is inserted into a hole formed in a first housing member. A cylindrical second electrode is inserted into and firmly fixed to the first electrode by a cylindrical insulating member. A first elastic member, for example, made of rubber, is arranged between the first electrode and a second housing member. The first electrode has a large-diameter portion, which is biased by the first elastic member toward a sealing surface formed on an inner wall of the hole, so as to fluid-tightly seal a space between the first electrode and the second housing member.

Abstract translation: 本发明的目的是提供一种具有较高检测精度的燃料方面传感器。 将第一电极插入形成在第一壳体构件中的孔中。 通过圆柱形绝缘构件将圆柱形第二电极插入并牢固地固定到第一电极。 第一弹性构件，例如由橡胶制成，布置在第一电极和第二壳体构件之间。 第一电极具有大直径部分，其被第一弹性构件偏压到形成在孔的内壁上的密封表面，以便流体密封第一电极和第二壳体构件之间的空间。

公开(公告)号：US08564312B2

公开(公告)日：2013-10-22

申请号：US13293405

申请日：2011-11-10

Applicant: Hiroshi Nakamura

Inventor： Hiroshi Nakamura

IPC: G01L23/22 ,  G01R19/00

CPC classification number: G01N33/2852 ,  F02D2200/0611

Abstract: An outer electrode projects from an opening, which is formed in an upper inner wall of a fuel passage, into the fuel passage. The fuel passage is adapted to conduct fuel generally in a horizontal direction. The outer electrode includes a fuel chamber in an inside of the outer electrode. An inner electrode is placed in the fuel chamber. A sensing circuit senses an alcohol concentration of the fuel based on an electrical property between the outer electrode and the inner electrode and a fuel temperature, which is sensed with a thermistor. The outer electrode includes a blocking portion and communication holes. The blocking portion limits intrusion of air bubbles, which flow along the upper inner wall of the fuel passage, into the communication holes.

Abstract translation: 外部电极从形成在燃料通路的上部内壁的开口突出到燃料通路内。 燃料通道适于一般沿水平方向传导燃料。 外部电极在外部电极的内部包括燃料室。 内部电极放置在燃料室中。 感测电路基于外部电极和内部电极之间的电气特性以及用热敏电阻感测的燃料温度来感测燃料的醇浓度。 外电极包括阻挡部分和连通孔。 阻挡部分限制沿着燃料通道的上内壁流动的气泡的入侵到连通孔中。

公开(公告)号：US08493814B2

公开(公告)日：2013-07-23

申请号：US13396272

申请日：2012-02-14

Applicant: Hiroshi Nakamura ,  Kenichi Imamiya

Inventor： Hiroshi Nakamura ,  Kenichi Imamiya

IPC: G11C8/00 ,  G11C16/34

CPC classification number: G11C8/10 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/3459 ,  H01L27/115

Abstract: A semiconductor memory device has a memory cell array, a first transistor of a first conductivity type, a second transistor of a second conductivity type and a third transistor of the first conductivity type. A source or drain of the first transistor is connected to each of word lines. A drain of the second transistor is connected to a gate of the first transistor. A source of the third transistor is connected to the gate of the first transistor. The gates of the second transistor and the third transistor are not connected, a source of the second transistor is not connected to a drain of the third transistor, and the gate of the second transistor and the drain of the third transistor have different voltage levels corresponding to opposite logic levels each other.

公开(公告)号：US08477534B2

公开(公告)日：2013-07-02

申请号：US13490541

申请日：2012-06-07

Applicant: Makoto Iwai ,  Hiroshi Nakamura

Inventor： Makoto Iwai ,  Hiroshi Nakamura

IPC: G11C16/04

CPC classification number: G11C16/3459 ,  G11C11/56 ,  G11C11/5628 ,  G11C11/5635 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/06 ,  G11C16/08 ,  G11C16/26 ,  G11C16/3436 ,  G11C16/3454

Abstract: A memory includes first and second select gate transistors, memory cells, a source line, a bit line, a selected word line which is connected to a selected memory cell as a target of a verify reading, a non-selected word line which is connected to a non-selected memory cell except the selected memory cell, a potential generating circuit for generating a selected read potential which is supplied to the selected word line, and generating a non-selected read potential larger than the selected read potential, which is supplied to the non-selected word line, and a control circuit which classifies a threshold voltage of the selected memory cell to one of three groups by verifying which area among three area which are isolated by two values does a cell current of the selected memory cell belong, when the selected read potential is a first value.

Abstract translation: 存储器包括第一和第二选择栅极晶体管，存储器单元，源极线，位线，连接到作为验证读取的目标的所选存储单元的选定字线，连接的未选择字线 到除所选存储单元之外的未选择的存储单元，用于产生提供给所选择的字线的所选择的读取电位并产生大于所选择的读取电位的未被选择的读取电位的电位产生电路， 以及控制电路，其通过验证被选择的存储器单元的单元电流属于两个值隔离的三个区域中的哪个区域属于三个组中的一个，将选择的存储单元的阈值电压分类为三个组中的一个 当所选择的读取电位为第一值时。

公开(公告)号：US08476199B2

公开(公告)日：2013-07-02

申请号：US12528413

申请日：2008-02-21

Applicant: Yuji Aoki ,  Tsutomu Koizumi ,  Yasuo Takahashi ,  Atsushi Kaneko ,  Takayo Hasegawa ,  Hiroshi Nakamura

Inventor： Yuji Aoki ,  Tsutomu Koizumi ,  Yasuo Takahashi ,  Atsushi Kaneko ,  Takayo Hasegawa ,  Hiroshi Nakamura

IPC: H01B12/00

CPC classification number: C22C19/03 ,  C22C5/06 ,  C22C29/12 ,  C23C28/021 ,  C23C28/023 ,  C23C28/028 ,  C23C28/321 ,  C23C28/322 ,  C23C28/3455 ,  C23C28/36 ,  H01L39/143 ,  H01L39/2454 ,  H01L39/2461 ,  Y10T428/12493

Abstract: This invention provides a rare earth-type tape-shaped oxide superconductor having excellent mechanical strength and superconducting properties and a composite substrate using for the same. Non-oriented and non-magnetic Ni-9 at % W alloy tapes (11, 21) were bonded onto both sides of a non-oriented and non-magnetic hastelloy tape (100) by a normal temperature bonding process, and an Ni-3 at % W alloy tape (12) having a cubic texture was bonded onto the surface of the tape (11) by a normal temperature bonding process. Thereafter, the heat-treatment was given in a reducing atmosphere and a bonding layer (50a) etc. was formed on the adhesive interface of each layer. Next, a (Ce, Gd)O2 intermediate layer (13) and a Ce2Zr2O7 intermediate layer (14) by an MOD process, a CeO2 intermediate layer (15), a YBCO superconducting film (16) by a TFA-MOD method, and a silver stabilization layer (17) were stacked sequentially on the surface of the tape (12). A critical current value (Ic) of this superconductor showed 150 A.

Abstract translation: 本发明提供了具有优异的机械强度和超导性能的稀土类型的带状氧化物超导体和使用该稀土类的带状氧化物超导体。 通过常温接合工艺将非取向和非磁性Ni-9 at％W合金带（11,21）粘合在无取向和非磁性哈氏合金带（100）的两侧， 具有立方体结构的3at％W合金带（12）通过常温接合工艺粘合到带（11）的表面上。 然后，在还原气氛中进行热处理，在各层的粘合剂界面上形成接合层（50a）等。 接着，通过MOD工艺，通过TFA-MOD法将（Ce，Gd）O 2中间层（13）和Ce 2 Zr 7 7中间层（14），CeO 2中间层（15），YBCO超导膜（16） 银稳定层（17）依次堆叠在带（12）的表面上。 该超导体的临界电流值（Ic）显示为150A。

公开(公告)号：US08475623B2

公开(公告)日：2013-07-02

申请号：US13565401

申请日：2012-08-02

Applicant: Seiichi Kaise ,  Noriyuki Iwabuchi ,  Shigeaki Kato ,  Hiroshi Nakamura ,  Takeshi Yokouchi ,  Mariko Shibata ,  Akira Obi

Inventor： Seiichi Kaise ,  Noriyuki Iwabuchi ,  Shigeaki Kato ,  Hiroshi Nakamura ,  Takeshi Yokouchi ,  Mariko Shibata ,  Akira Obi

IPC: C23F1/00

CPC classification number: H01L21/67748 ,  H01J37/32743 ,  H01L21/67201 ,  H01L21/6831

Abstract: A substrate processing method is used for a substrate processing system having a substrate processing device and a substrate transfer device. The substrate processing method includes a substrate transfer step of transferring a substrate and a substrate processing step of performing a predetermined process on the substrate. The substrate transfer step and the substrate processing step include a plurality of operations, and at least two operations among the plurality of the operations are performed simultaneously. Preferably, the substrate processing device includes an accommodating chamber, a mounting table placed in the accommodating chamber to be mounted thereon the substrate, and a heat transfer gas supply line for supplying a heat transfer gas to a space between the substrate mounted on the mounting table and the mounting table.

Abstract translation: 基板处理方法用于具有基板处理装置和基板转印装置的基板处理系统。 基板处理方法包括将基板转印的基板转印步骤和对基板执行预定处理的基板处理步骤。 基板转印步骤和基板处理步骤包括多个操作，并且同时执行多个操作中的至少两个操作。 优选地，基板处理装置包括容纳室，放置在容纳室中以安装在基板上的安装台，以及用于将传热气体供应到安装在安装台上的基板之间的空间的传热气体供应管线 和安装台。