Invention Grant
US09478655B2 Semiconductor device having a lower diode region arranged below a trench
有权
具有布置在沟槽下方的较低二极管区域的半导体器件
- Patent Title: Semiconductor device having a lower diode region arranged below a trench
- Patent Title (中): 具有布置在沟槽下方的较低二极管区域的半导体器件
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Application No.: US14718443Application Date: 2015-05-21
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Publication No.: US09478655B2Publication Date: 2016-10-25
- Inventor: Ralf Siemieniec , Wolfgang Bergner , Romain Esteve , Dethard Peters
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102014107325 20140523
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L31/0312 ; H01L29/78 ; H01L29/16 ; H01L29/66 ; H01L29/167 ; H01L21/04 ; H01L29/423 ; H01L29/04 ; H01L29/861 ; H01L29/06
Abstract:
A semiconductor device includes a semiconductor body and at least one device cell integrated in the semiconductor body. Each device cell includes: a drift region, a source region, and a body region arranged between the source and drift regions; a diode region and a pn junction between the diode and drift regions; a trench having a first sidewall, a second sidewall opposite the first sidewall, and a bottom, the body region adjoining the first sidewall, the diode region adjoining the second sidewall, and the pn junction adjoining the bottom; a gate electrode in the trench and dielectrically insulated from the body, diode and drift regions by a gate dielectric. The diode region has a lower diode region arranged below the trench bottom, and the lower diode region has a maximum of a doping concentration distant to the trench bottom. A corresponding method of manufacturing the device also is provided.
Public/Granted literature
- US20150340487A1 Semiconductor Device Having a Lower Diode Region Arranged Below a Trench Public/Granted day:2015-11-26
Information query
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