发明授权
US09384960B2 Method of manufacturing a semiconductor device with a continuous silicate glass structure
有权
制造具有连续硅酸盐玻璃结构的半导体器件的方法
- 专利标题： Method of manufacturing a semiconductor device with a continuous silicate glass structure
- 专利标题（中）： 制造具有连续硅酸盐玻璃结构的半导体器件的方法
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申请号： US14824339申请日： 2015-08-12
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公开(公告)号： US09384960B2公开(公告)日： 2016-07-05
- 发明人: Hans-Joachim Schulze , Alexander Susiti , Markus Zundel , Reinhard Ploss
- 申请人： Infineon Technologies AG
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Murphy, Bilak & Homiller, PLLC
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/02 ; H01L21/3115 ; H01L23/29 ; H01L23/31 ; H01L29/10 ; H01L29/78 ; H01L29/49 ; H01L29/66 ; H01L29/739 ; H01L29/06 ; H01L29/423 ; H01L29/40
摘要：
A method of manufacturing a semiconductor device includes forming a continuous silicate glass structure over a first surface of a semiconductor body, including a first part of the continuous glass structure over an active area of the semiconductor body and a second part of the continuous glass structure over an area of the semiconductor body outside of the active area. A first composition of dopants included in the first part of continuous glass structure differs from a second composition of dopants of the second part of the continuous glass structure.
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