发明授权
- 专利标题： Power semiconductor device and fabrication method thereof
- 专利标题（中）： 功率半导体器件及其制造方法
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申请号： US13915810申请日： 2013-06-12
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公开(公告)号： US09123769B2公开(公告)日： 2015-09-01
- 发明人: Ho Hyun Kim , Seung Bae Hur , Seung Wook Song , Jeong Hwan Park , Ha Yong Yang , In Su Kim
- 申请人： Magnachip Semiconductor, Ltd.
- 申请人地址： KR Cheongju-si
- 专利权人： Magnachip Semiconductor, Ltd.
- 当前专利权人： Magnachip Semiconductor, Ltd.
- 当前专利权人地址： KR Cheongju-si
- 代理机构： NSIP Law
- 优先权： KR10-2012-0101712 20120913
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L29/739
摘要：
Provided is a power semiconductor device and a fabrication method thereof are provided. The power semiconductor device includes: a first epitaxial layer; a collector layer formed on one side of the first epitaxial layer; and a second epitaxial layer formed on another side of the first epitaxial layer, the first epitaxial layer having a higher doping concentration than the second epitaxial layer.
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