发明授权
- 专利标题： Dielectric isolation substrate and semiconductor device
- 专利标题（中）： 介质隔离衬底和半导体器件
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申请号： US13410739申请日： 2012-03-02
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公开(公告)号： US08981473B2公开(公告)日： 2015-03-17
- 发明人: Ryo Wada , Kaori Yoshioka , Norio Yasuhara , Tomoko Matsudai , Yuichi Goto
- 申请人： Ryo Wada , Kaori Yoshioka , Norio Yasuhara , Tomoko Matsudai , Yuichi Goto
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Patterson & Sheridan, LLP
- 优先权： JPP2011-181489 20110823
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/761 ; H01L29/739 ; H01L29/66 ; H01L29/861 ; H01L29/06 ; H01L29/10
摘要：
According to one embodiment, in a dielectric isolation substrate, an insulating film having a first thickness is provided on a semiconductor substrate. A semiconductor layer of a first conductivity type having a second thickness is provided on the insulating film. An impurity diffusion layer of a second conductivity type is provided partially in a lower portion of the semiconductor layer and is in contact with the insulating film.
公开/授权文献
- US20130049111A1 DIELECTRIC ISOLATION SUBSTRATE AND SEMICONDUCTOR DEVICE 公开/授权日：2013-02-28
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