发明授权
US5780871A TFT structure including a photo-imageable insulating layer for use with
LCDs and image sensors
失效
TFT结构包括用于LCD和图像传感器的可光刻绝缘层
- 专利标题： TFT structure including a photo-imageable insulating layer for use with LCDs and image sensors
- 专利标题（中）： TFT结构包括用于LCD和图像传感器的可光刻绝缘层
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申请号： US832345申请日： 1997-04-02
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公开(公告)号： US5780871A公开(公告)日： 1998-07-14
- 发明人: Willem den Boer , John Z. Z. Zhong , Tieer Gu
- 申请人： Willem den Boer , John Z. Z. Zhong , Tieer Gu
- 申请人地址： MI Northville
- 专利权人： OIS Optical Imaging Systems, Inc.
- 当前专利权人： OIS Optical Imaging Systems, Inc.
- 当前专利权人地址： MI Northville
- 主分类号： G02F1/1343
- IPC分类号： G02F1/1343 ; G02F1/1333 ; G02F1/136 ; G02F1/1362 ; G02F1/1368 ; H01L21/336 ; H01L21/77 ; H01L21/84 ; H01L27/12 ; H01L27/146 ; H01L29/04 ; H01L29/786 ; H01L31/036 ; H01L31/0376 ; H01L31/20
摘要：
This invention is related to an active matrix liquid crystal display (AMLCD) having a high pixel aperture ratio. The display has an increased pixel aperture ratio because the pixel electrodes are formed over the insulating layer so as to overlap portions of the array address lines. Both the manufacturability and capacitive cross-talk of the TFT-based device are improved due to the use of a photo-imageable insulating layer between the pixel electrodes and the address lines.
公开/授权文献
- US5270775A Recording apparatus managing system 公开/授权日：1993-12-14
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