Invention Grant
US4933296A N.sup.+ amorphous silicon thin film transistors for matrix addressed
liquid crystal displays
失效
用于矩阵寻址液晶显示器的N +非晶硅薄膜晶体管
- Patent Title: N.sup.+ amorphous silicon thin film transistors for matrix addressed liquid crystal displays
- Patent Title (中): 用于矩阵寻址液晶显示器的N +非晶硅薄膜晶体管
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Application No.: US761938Application Date: 1985-08-02
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Publication No.: US4933296APublication Date: 1990-06-12
- Inventor: Harold G. Parks , William W. Piper , George E. Possin , Donald E. Castleberry
- Applicant: Harold G. Parks , William W. Piper , George E. Possin , Donald E. Castleberry
- Applicant Address: NY Schenectady
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: NY Schenectady
- Main IPC: H01L29/78
- IPC: H01L29/78 ; G02F1/133 ; G02F1/136 ; G02F1/1368 ; G09F9/35 ; H01L21/285 ; H01L21/336 ; H01L21/77 ; H01L21/84 ; H01L27/12 ; H01L29/45 ; H01L29/786
Abstract:
A thin film FET switching element, particularly useful in liquid crystal displays (LCDs) employs particular materials and is fabricated via a particular process to ensure chemical compatibility and the formation of good electrical contact to an amorphous silicon layer while also producing FETs with desirable electrical properties for LCDs. These materials include the use of titanium as a gate electrode material and the use of N.sup.+ amorphous silicon as a material to enhance electrical contact between molybdenum source and drain pads and an underlying layer of amorphous silicon. The process of the present invention provides enhanced fabrication yield and device performance.
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