Invention Publication
- Patent Title: MEMORY DEVICES INCLUDING VERTICAL STACK STRUCTURE, METHODS OF MANUFACTURING AND OPERATING THE SAME, AND ELECTRONIC APPARATUSES INCLUDING MEMORY DEVICE
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Application No.: US18340419Application Date: 2023-06-23
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Publication No.: US20240215250A1Publication Date: 2024-06-27
- Inventor: Seyun KIM , Jooheon Kang , Yumin Kim , Garam Park , Hyunjae Song , Dongho Ahn , Seungyeul Yang , Myunghun Woo , Jinwoo Lee , Seungdam Hyun
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR 20220185903 2022.12.27
- Main IPC: H10B43/35
- IPC: H10B43/35 ; G11C16/04 ; H10B43/10 ; H10B43/27
Abstract:
A memory device including the vertical stack structure includes a gate electrode, a resistance change layer, a channel between the gate electrode and the resistance change layer, and an island structure between the resistance change layer and the channel and in contact with the resistance change layer and the channel, and a gate insulating layer between the gate electrode and the channel.
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