- 专利标题： NANOSHEET TRANSISTORS WITH BURIED POWER RAILS
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申请号： US17486840申请日： 2021-09-27
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公开(公告)号： US20230094466A1公开(公告)日： 2023-03-30
- 发明人: Julien Frougier , Nicolas Loubet , Sagarika Mukesh , PRASAD BHOSALE , Ruilong Xie , Andrew Herbert Simon , Takeshi Nogami , Lawrence A. Clevenger , Roy R. Yu , Andrew M. Greene , Daniel Charles Edelstein
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L23/528 ; H01L29/06 ; H01L29/423 ; H01L29/66 ; H01L21/8234
摘要：
A semiconductor structure includes a substrate and a first field effect transistor (FET) formed on the substrate; the first FET includes a first FET first source-drain region, a first FET second source-drain region, a first FET gate between the first and second source-drain regions, and a first FET channel region adjacent the first FET gate and between the first FET first and second source-drain regions. Also included is a buried power rail, buried in the substrate, having a top at a level lower than the first FET channel region, and having buried power rail sidewalls. A first FET shared contact is electrically interconnected with the buried power rail and the first FET second source-drain region, and a first FET electrically isolating region is adjacent the buried power rail sidewalls and separates the buried power rail from the substrate.
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