Invention Application
- Patent Title: PAGE BUFFER CIRCUIT AND MEMORY DEVICE INCLUDING THE SAME
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Application No.: US17530911Application Date: 2021-11-19
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Publication No.: US20220366964A1Publication Date: 2022-11-17
- Inventor: Inho KANG , Ilhan PARK , Jinyoung CHUN
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2021-0063169 20210517
- Main IPC: G11C11/4093
- IPC: G11C11/4093 ; G11C11/406 ; G11C11/4094 ; G11C11/4096 ; G11C11/4074 ; G11C7/10

Abstract:
A page buffer circuit includes a plurality of page buffers connected to a plurality of bitlines. Each of the plurality of page buffers includes a bitline selection transistor configured to connect a corresponding bitline of the plurality of bitlines to a sensing node, a precharge circuit configured to precharge the sensing node, and a dynamic latch circuit configured to store data in a storage node. Each of the plurality of page buffers is configured to refresh the data stored in the storage node through charge sharing between the storage node and the sensing node.
Public/Granted literature
- US11869579B2 Page buffer circuit and memory device including the same Public/Granted day:2024-01-09
Information query
IPC分类: