Invention Application
- Patent Title: Silicon Carbide Semiconductor Component
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Application No.: US16404284Application Date: 2019-05-06
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Publication No.: US20190341447A1Publication Date: 2019-11-07
- Inventor: Ralf Siemieniec , Thomas Aichinger , Thomas Basler , Wolfgang Bergner , Rudolf Elpelt , Romain Esteve , Michael Hell , Daniel Kueck , Caspar Leendertz , Dethard Peters , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Priority: DE102018110943.1 20180507
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L29/10 ; H01L21/04 ; H01L29/66 ; H01L29/16
Abstract:
A semiconductor component has a gate structure that extends from a first surface into an SiC semiconductor body. A body area in the SiC semiconductor body adjoins a first side wall of the gate structure. A first shielding area and a second shielding area of the conductivity type of the body area have at least twice as high a level of doping as the body area. A diode area forms a Schottky contact with a load electrode between the first shielding area and the second shielding area.
Public/Granted literature
- US11101343B2 Silicon carbide field-effect transistor including shielding areas Public/Granted day:2021-08-24
Information query
IPC分类:
