Invention Application
- Patent Title: HIGH POWER COMPOUND SEMICONDUCTOR FIELD EFFECT TRANSISTOR DEVICES WITH LOW DOPED DRAIN
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Application No.: US15645188Application Date: 2017-07-10
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Publication No.: US20190013398A1Publication Date: 2019-01-10
- Inventor: Bin YANG , Xia LI , Gengming TAO , Periannan CHIDAMBARAM
- Applicant: QUALCOMM Incorporated
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/10 ; H01L29/205 ; H01L29/66 ; H01L21/74 ; H01L23/66
Abstract:
A compound semiconductor field effect transistor may include a channel layer. The compound semiconductor transistor may also include a multi-layer epitaxial barrier layer on the channel layer. The channel layer may be on a doped buffer layer or on a first un-doped buffer layer. The compound semiconductor field effect transistor may further include a gate. The gate may be on a first tier of the multi-layer epitaxial barrier layer, and through a space between portions of a second tier of the multi-layer epitaxial barrier layer.
Public/Granted literature
- US10756206B2 High power compound semiconductor field effect transistor devices with low doped drain Public/Granted day:2020-08-25
Information query
IPC分类:
