发明申请
- 专利标题: OPTICAL PROXIMITY CORRECTION METHOD
- 专利标题(中): 光临近度校正方法
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申请号: US10711198申请日: 2004-09-01
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公开(公告)号: US20050009344A1公开(公告)日: 2005-01-13
- 发明人: Jiunn-Ren Hwang , Jui-Tsen Huang , Chang-Jyh Hsieh
- 申请人: Jiunn-Ren Hwang , Jui-Tsen Huang , Chang-Jyh Hsieh
- 主分类号: G03F1/00
- IPC分类号: G03F1/00 ; G03F1/14 ; H01L21/302 ; H01L21/461
摘要:
An integrated circuit layout includes dense figures and at least one isolated figure. A plurality of dummy patterns are formed to surround the isolated figure, so as to reduce the difference in pattern density of the integrated circuit layout. A transmitted light of the dummy patterns provides a phase difference of 0 or 180 degrees relative to a transmitted light of the integrated circuit layout. The integrated circuit layout and the plurality of dummy patterns are formed on a photo-mask.
公开/授权文献
- US07063923B2 Optical proximity correction method 公开/授权日:2006-06-20
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