- 专利标题： MOS-based power semiconductor device having increased current carrying area and method of fabricating same
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申请号： US17499579申请日： 2021-10-12
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公开(公告)号： US11973114B2公开(公告)日： 2024-04-30
- 发明人: James A. Cooper
- 申请人： Purdue Research Foundation
- 申请人地址： US IN West Lafayette
- 专利权人： Purdue Research Foundation
- 当前专利权人： Purdue Research Foundation
- 当前专利权人地址： US IN West Lafayette
- 代理机构： Maginot, Moore & Beck LLP
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/06 ; H01L29/08 ; H01L29/16 ; H01L29/49 ; H01L29/66 ; H01L29/739 ; H01L29/78
摘要：
A semiconductor device includes at least a first lateral MOSFET formed on a semiconductor substrate. The first lateral MOSFET has an interface defined by a plurality of trenches along which the current flow can be modulated by a perpendicular electric field. The portion of the interface lies on a plane substantially perpendicular to the plane of the substrate. The interface is configured such that at least a portion of the current flow along the portion of the interface that lies on a plane substantially perpendicular to the plane of the substrate is in a direction substantially parallel to the plane of the substrate.
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