Invention Grant
- Patent Title: Semiconductor memory device having cell units and via regions with a different width
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Application No.: US17242232Application Date: 2021-04-27
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Publication No.: US11785771B2Publication Date: 2023-10-10
- Inventor: Jin Ho Kim , Tae Sung Park , Sang Hyun Sung , Sung Lae Oh
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Priority: KR 20200160671 2020.11.26
- Main IPC: H01L27/11565
- IPC: H01L27/11565 ; H01L27/11519 ; H01L27/11529 ; H01L27/11556 ; H01L27/11582 ; H01L27/11573 ; H10B43/10 ; H10B41/10 ; H10B41/27 ; H10B41/41 ; H10B43/27 ; H10B43/40
Abstract:
A semiconductor memory device includes a memory cell array disposed over a substrate extending in a first direction and a second direction intersecting with the first direction in a first semiconductor layer, and including a plurality of cell units and at least two via regions that are arranged in the second direction, wherein a width of each of the at least two via regions in the second direction is a multiple of a width of each of the plurality of cell units in the second direction.
Public/Granted literature
- US20220165744A1 SEMICONDUCTOR MEMORY DEVICE HAVING CELL UNITS AND VIA REGIONS WITH A DIFFERENT WIDTH Public/Granted day:2022-05-26
Information query
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