- 专利标题： Stacked three-dimensional field-effect transistors
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申请号： US17334422申请日： 2021-05-28
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公开(公告)号： US11532708B2公开(公告)日： 2022-12-20
- 发明人: Lars Liebmann , Jeffrey Smith , Daniel Chanemougame , Paul Gutwin
- 申请人： Tokyo Electron Limited
- 申请人地址： JP Tokyo
- 专利权人： Tokyo Electron Limited
- 当前专利权人： Tokyo Electron Limited
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L29/06 ; H01L29/78 ; H01L29/66
摘要：
A semiconductor device includes a first field-effect transistor positioned over a substrate, a second field-effect transistor stacked over the first field-effect transistor, a third field-effect transistor stacked over the second field-effect transistor, and a fourth field-effect transistor stacked over the third field-effect transistor. A bottom gate structure is disposed around a first channel structure of the first field-effect transistor and positioned over the substrate. An intermediate gate structure is disposed over the bottom gate structure and around a second channel structure of the second field-effect transistor and a third channel structure of the third field-effect transistor. A top gate structure is disposed over the intermediate gate structure and around a fourth channel structure of the fourth field-effect transistor. An inter-level contact is formed to bypass the intermediate gate structure from a first side of the intermediate gate structure, and arranged between the bottom gate structure and the top gate structure.
公开/授权文献
- US20220181441A1 THREE-DIMENSIONAL SEMICONDUCTOR DEVICE 公开/授权日：2022-06-09
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