Invention Grant
- Patent Title: Contact over active gate structure
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Application No.: US16558702Application Date: 2019-09-03
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Publication No.: US10930555B2Publication Date: 2021-02-23
- Inventor: Wenhui Wang , Huixiong Dai , Christopher S. Ngai
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/3205 ; H01L21/768 ; H01L23/522 ; H01L21/033
Abstract:
Methods of forming and processing semiconductor devices which utilize a three-color process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts utilizing selective deposition of overlapping masks in a three-color process.
Public/Granted literature
- US20200075408A1 Contact Over Active Gate Structure Public/Granted day:2020-03-05
Information query
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