Provided is a method performed by a nonvolatile memory device, the method may include: initiating a first program operation corresponding to a first program loop among a plurality of program loops; receiving a suspend command for an urgent read operation during the first program operation; determining a recovery timing from either of a first timing contemporaneous with the receiving the suspend command, and a second timing after completion of the first program operation, based on the suspend command; and initiating a recovery at the determined recovery timing by applying a recovery voltage to a selected word line.