Invention Grant
- Patent Title: System on chip
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Application No.: US16037581Application Date: 2018-07-17
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Publication No.: US10541237B2Publication Date: 2020-01-21
- Inventor: Sang-Hoon Baek , Sun-Young Park , Sang-Kyu Oh , Ha-Young Kim , Jung-Ho Do , Moo-Gyu Bae , Seung-Young Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2015-0056266 20150422
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L29/40 ; H01L27/088 ; H01L27/02 ; H01L27/11 ; H01L21/8234 ; H01L23/528

Abstract:
A method is provided. The method includes forming a first to third gate lines on a substrate, the second gate line formed between the first and third gate lines; forming a gate isolation region to cut the first to third gate lines into two first sub gate lines, two second sub gate lines and two third sub gate lines, respectively; forming a first gate contact on one of the two first sub gate lines; forming a second gate contact on the two second sub gate lines; forming a third gate contact on one of the two third sub gate lines; forming a first metal line to connect the first and third gate contacts; and forming a second metal line. The first to third gate lines extend in a first direction, and the gate isolation region extends in a second direction different from the first direction.
Public/Granted literature
- US20180342505A1 SYSTEM ON CHIP Public/Granted day:2018-11-29
Information query
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