According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes a first region, a second region, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third region includes first and second end portions. The first end portion includes a first protrusion. The second end portion includes a second protrusion. A first position along the second direction of the first protrusion is different from a second position along the second direction of the second protrusion.