Invention Grant
- Patent Title: Semiconductor device having stressor and method of manufacturing the same
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Application No.: US15084785Application Date: 2016-03-30
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Publication No.: US10304840B2Publication Date: 2019-05-28
- Inventor: Keun-hee Bai , Myeong-cheol Kim , Kwan-heum Lee , Do-hyoung Kim , Jin-wook Lee , Seung-mo Ha , Dong-Hoon Khang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse P.C.
- Priority: KR10-2015-0078246 20150602
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L27/088 ; H01L29/78 ; H01L21/8234 ; H01L29/66 ; H01L29/08 ; H01L29/161 ; H01L29/165

Abstract:
A semiconductor device includes a substrate, a fin active region pattern on the substrate, the fin active region pattern including an upper region and a lower region, a device isolation layer pattern surrounding the fin active region pattern, a gate pattern on the upper region of the fin active region pattern, and a stressor on the lower region of the fin active region pattern, wherein a top surface of the device isolation layer pattern is lower than a top surface of the upper region and higher than a top surface of the lower region.
Public/Granted literature
- US20160358925A1 SEMICONDUCTOR DEVICE HAVING STRESSOR AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-12-08
Information query
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