- 专利标题： Semiconductor device for power transistor
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申请号： US16137279申请日： 2018-09-20
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公开(公告)号： US10256339B2公开(公告)日： 2019-04-09
- 发明人: Yasunori Yamashita , Koichi Arai , Kenichi Hisada
- 申请人： RENESAS ELECTRONICS CORPORATION
- 申请人地址： JP Tokyo
- 专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人： RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2016-124326 20160623
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L29/78 ; H01L29/66 ; H01L21/311 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L29/16 ; H01L29/423 ; H01L29/45 ; H01L29/51
摘要：
In a semiconductor device, in a gate insulating film which is formed on/over an inner wall of a trench, the film thickness of a part of a gate insulating film formed so as to cover a corner of the trench is made thicker than the film thickness of apart of the gate insulating film part formed on/over a side face of the trench.
公开/授权文献
- US20190027597A1 SEMICONDUCTOR DEVICE FOR POWER TRANSISTOR 公开/授权日：2019-01-24
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