Invention Grant
- Patent Title: Semiconductor device containing oxygen-related thermal donors
-
Application No.: US15718189Application Date: 2017-09-28
-
Publication No.: US10192955B2Publication Date: 2019-01-29
- Inventor: Johannes Georg Laven , Moriz Jelinek , Hans-Joachim Schulze , Werner Schustereder , Michael Stadtmueller
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Priority: DE102015107085 20150506
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/324 ; H01L21/8234 ; H01L29/739 ; H01L21/263 ; H01L21/265 ; H01L21/322 ; H01L29/36 ; H01L29/861 ; H01L29/167 ; H01L21/66
Abstract:
A method of manufacturing a semiconductor device includes determining information that indicates an extrinsic dopant concentration and an intrinsic oxygen concentration in a semiconductor wafer. On the basis of information about the extrinsic dopant concentration and the intrinsic oxygen concentration as well as information about a generation rate or a dissociation rate of oxygen-related thermal donors in the semiconductor wafer, a process temperature gradient is determined for generating or dissociating oxygen-related thermal donors to compensate for a difference between a target dopant concentration and the extrinsic dopant concentration.
Public/Granted literature
Information query
IPC分类:
