发明授权
- 专利标题： Cobalt-containing conductive layers for control gate electrodes in a memory structure
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申请号： US14613956申请日： 2015-02-04
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公开(公告)号： US10128261B2公开(公告)日： 2018-11-13
- 发明人: Raghuveer S. Makala , Rahul Sharangpani , Sateesh Koka , Genta Mizuno , Naoki Takeguchi , Senaka Krishna Kanakamedala , George Matamis , Yao-Sheng Lee , Johann Alsmeier
- 申请人： SANDISK TECHNOLOGIES INC.
- 申请人地址： US TX Addison
- 专利权人： SANDISK TECHNOLOGIES LLC
- 当前专利权人： SANDISK TECHNOLOGIES LLC
- 当前专利权人地址： US TX Addison
- 代理机构： The Marbury Law Group PLLC
- 主分类号： H01L27/115
- IPC分类号： H01L27/115 ; H01L27/11582 ; H01L27/11556 ; H01L29/49 ; H01L21/28 ; H01L27/11563 ; H01L27/11578 ; H01L29/66 ; H01L29/788 ; H01L29/792 ; H01L21/3213 ; H01L21/768 ; H01L27/11519 ; H01L27/11524 ; H01L27/11565 ; H01L27/1157 ; H01L27/11568
摘要：
A memory film and a semiconductor channel can be formed within each memory opening that extends through a stack including an alternating plurality of insulator layers and sacrificial material layers. After formation of backside recesses through removal of the sacrificial material layers selective to the insulator layers, a metallic barrier material portion can be formed in each backside recess. A cobalt portion can be formed in each backside recess. Each backside recess can be filled with a cobalt portion alone, or can be filled with a combination of a cobalt portion and a metallic material portion including a material other than cobalt.
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