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发明授权
CN1947067B 光刻用冲洗液 失效 - 权利终止

光刻用冲洗液
摘要：
本发明涉及一种新型光刻用冲洗液，及使用其的抗蚀图案的形成方法，所述光刻用冲洗液是，对于光致抗蚀图案，可以减少制品的表面缺陷，即所谓缺陷，并赋予抗蚀剂对电子射线照射的耐性，抑制图案收缩所使用的。调制包括含有在分子结构中具有氮原子的水溶性树脂的溶液的光刻用冲洗液，使用其通过以下工序形成抗蚀图案：(A)在基板上设置光致抗蚀膜的工序、(B)通过掩模图案对该光致抗蚀膜进行选择性曝光处理工序、(C)曝光后加热(PEB)处理工序、(D)碱性显影处理工序，及(E)使用上述光刻用冲洗液的处理工序。
摘要（英）：

A novel rinse solution for lithography to be used for suppressing contraction of a pattern and a method for forming a resist pattern using the rinse solution are provided, by reducing product surface defects of a photoresist pattern and providing the photoresist pattern with resistance to electronic beam irradiation. The rinse solution for lithography composed of a solution including a water-soluble resin having a nitrogen atom in a molecular structure is prepared. The resist pattern is formed with the rinse solution by performing (A) a process of providing a photoresist film on a board, (B) a process of selectively exposing the photoresist film through a mask pattern, (C) a process of performing post exposure bake (PEB), (D) a process of alkaline development, and (E) a process of treatment with the rinse solution for lithography.

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