The invention discloses a method for decreasing series resistors of a P type substrate hetero junction with intrinsic thin layer (HIT) solar cell. The P type HIT solar cell comprises a P type crystalline silicon substrate layer, a first intrinsic non-crystalline silicon layer, a second intrinsic non-crystalline silicon layer, a N type non-crystalline silicon layer, a P type non-crystalline silicon layer, a first transparent conductive oxide (TCO ) layer and an electrode, a second TCO layer and an electrode. The first intrinsic non-crystalline layer and the second intrinsic non-crystalline layer are arranged on two sides of the P type crystalline silicon substrate layer, the N type non-crystalline layer is arranged on the outer side of the first intrinsic non-crystalline silicon layer, the P type non-crystalline silicon layer is arranged on the outer side of the second intrinsic non-crystalline silicon layer, the first TCO layer and the electrode are arranged on the outer side of the N type non-crystalline silicon layer, and the second TCO layer and the electrode are arranged on the outer side of the P type non-crystalline silicon layer, wherein the second TCO layer is a lamination layer composed of a high work function TCO layer and a low work function TCO layer, and the high work function TCO layer contacts with the P type non-crystalline silicon layer. At the same time, the invention discloses a corresponding method for formation of the solar cell.