The invention discloses a lateral double-diffused metal oxide semiconductor device and a manufacturing method thereof. The lateral double-diffused metal oxide semiconductor device is provided with a single contact pad in a source electrode region and comprises a first well, a second well, field oxides and a plurality of conducting contact pads, wherein the first well is lightly doped with a firstdopant and is formed in one part of the substrate; a drain electrode region is formed on the surface of the first well and is heavily doped with a first dopant; the second well is lightly doped with a second conducting dopant and is formed in the other part of the substrate; the source electrode region is formed on the surface of the second well and contains a plurality of first parts and a plurality of second parts; and the first parts and the second parts are respectively and heavily doped with first and second conducting dopants. The filed oxides are formed on the upper surface of the substrate. The contact pads are contacted with a grid electrode region, the drain electrode region and the source electrode region; and the contact pads contacted with the source electrode regions comprise single-strip source electrode contact pads which are made of conducting materials and extend to pass through the source electrode regions.