Provided is a semiconductor device and a method of manufacture, more particularly, a semiconductor device having strain films and a method of manufacture. The device includes an embedded SiGeC layer in source and drain regions of an NFET device and an embedded SiGe layer in source and drain regions of a PFET device. The PFET device is subject to compressive strain. The method includes embedding SiGe in source and drain regions of an NFET device and implanting carbon in the embedded SiGe forming an SiGeC layer in the source and drain regions of the NFET device. The SiGeC is melt laser annealedto uniformly distribute the carbon in the SiGeC layer, thereby counteracting a strain generated by the embedded SiGe.