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公开(公告)号:US12114572B2
公开(公告)日:2024-10-08
申请号:US17297213
申请日:2019-12-02
IPC分类号: H10N10/852 , C01G45/00 , H10N10/853
CPC分类号: H10N10/852 , C01G45/006 , H10N10/853
摘要: A compound containing Sn, Te and Mn, and further containing either one or both of Sb and Bi.
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公开(公告)号:US12102005B2
公开(公告)日:2024-09-24
申请号:US17993195
申请日:2022-11-23
IPC分类号: H10N10/13 , H01J45/00 , H10N10/851 , H10N10/853 , H10N10/855
CPC分类号: H10N10/13 , H01J45/00 , H10N10/851 , H10N10/853 , H10N10/855
摘要: A thermionic energy converter, preferably including an anode and a cathode. An anode of a thermionic energy converter, preferably including an n-type semiconductor, one or more supplemental layers, and an electrical contact. A method for work function reduction and/or thermionic energy conversion, preferably including inputting thermal energy to a thermionic energy converter, illuminating an anode of the thermionic energy converter, thereby preferably reducing a work function of the anode, and extracting electrical power from the system.
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公开(公告)号:US20240122072A1
公开(公告)日:2024-04-11
申请号:US18542606
申请日:2023-12-16
发明人: RYOSUKE YAMAMURA , HIROMASA TAMAKI
IPC分类号: H10N10/853 , C22C23/00
CPC分类号: H10N10/853 , C22C23/00
摘要: The thermoelectric conversion material of the present disclosure has a composition represented by Mg3-a-bAaCabSb2-xBix. A includes at least one selected from the group consisting of Ag, Na, and Li, and 0
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公开(公告)号:US11627691B2
公开(公告)日:2023-04-11
申请号:US15999846
申请日:2017-02-17
发明人: Zhifeng Ren , Jing Shuai
IPC分类号: H10N10/852 , C22C12/00 , H10N10/853 , C22C28/00 , B22F3/15 , B22F1/054 , B22F9/04
摘要: Systems and methods discussed herein relate to Zintl-type thermoelectric materials, including a p-type thermoelectric material according to the formula AMyXy, and includes at least one of calcium (Ca), europium (Eu), ytterbium (Yb), and strontium (Sr), and has a ZT of the above about 0.60 above 675K. The n-type thermoelectric component includes magnesium (Mg), tellurium (Te), antimony (Sb), and bismuth (Bi) according to the formula Mg3.2Sb1.3Bi0.5-xTex that has an average ZT above 0.8 from 400K to 800K. The p-type and n-type materials discussed herein may be used alone, in combination with other materials, or in combination with each other in various configurations.
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公开(公告)号:US12058936B2
公开(公告)日:2024-08-06
申请号:US18025608
申请日:2021-08-25
发明人: Takao Mori , Zihang Liu
CPC分类号: H10N10/853 , B22F1/10 , B22F3/105 , B22F9/04 , C22C1/0408 , C22C23/00 , H10N10/01 , H10N10/17 , B22F2202/13 , B22F2301/058 , B22F2998/10 , B22F2999/00
摘要: Provided is a thermoelectric material which exhibits excellent thermoelectric characteristics at room temperature; a method for producing this thermoelectric material; and a thermoelectric power generation element using this thermoelectric material. In an embodiment of the present invention, a thermoelectric material contains an inorganic compound that contains magnesium (Mg), antimony (Sb) and/or bismuth (Bi), copper (Cu), and if necessary M (M is composed of at least one element that is selected from the group consisting of selenium (Se) and tellurium (Te)); and inorganic compound is represented by MgaSb2-b-cBibMcCud, wherein a, b, c and d satisfy 3≤a≤3.5, 0≤b≤2, 0≤c≤0.06, 0≤d≤0.1, and (b+1)≤2.
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公开(公告)号:US20240051829A1
公开(公告)日:2024-02-15
申请号:US18018470
申请日:2021-07-28
CPC分类号: C01B25/08 , C22C28/00 , C22F1/16 , C22F1/02 , H10N10/853 , H10N10/01 , C01P2002/50 , C01P2006/40 , C01P2006/32 , C01P2002/82 , C01P2004/04 , C01P2002/90
摘要: Thermoelectric devices including Arsenic-Phos-phorous (AsxP1-x) as a source of power, wherein x is a number ranging from 0.1 to 1, are provided. Methods of making crystalline Arsenic-Phosphorous (AsxP1-x), wherein x ranges from 0.1 to 1, are also provided. The methods include annealing phosphorous and arsenic at a temperature and under conditions sufficient to produce crystalline formation.
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公开(公告)号:US11812663B2
公开(公告)日:2023-11-07
申请号:US16862724
申请日:2020-04-30
发明人: Ying-Jung Chiang , Ren-Der Jean , Hong-Ching Lin , Hsu-Shen Chu
IPC分类号: H10N10/17 , H10N10/01 , H10N10/852 , H10N10/853 , H10N10/857 , H10N10/85 , H10N10/00
CPC分类号: H10N10/17 , H10N10/01 , H10N10/852 , H10N10/853 , H10N10/857 , H10N10/00 , H10N10/85
摘要: A flexible thermoelectric structure is provided, which includes a porous thermoelectric pattern having a first surface and a second surface opposite to the first surface, and a polymer film covering the first surface of the porous thermoelectric pattern. The polymer film fills pores of the porous thermoelectric pattern. The polymer film has a first surface and a second surface opposite to the first surface. The second surface of the polymer film is coplanar with the second surface of the porous thermoelectric pattern.
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公开(公告)号:US11785850B2
公开(公告)日:2023-10-10
申请号:US17836072
申请日:2022-06-09
发明人: Zhifeng Ren , Hangtian Zhu
IPC分类号: H10N10/853 , H10N10/80
CPC分类号: H10N10/853 , H10N10/80
摘要: A method of thermoelectric power generation by converting heat to electricity via the use of a ZrCoBi-based thermoelectric material, wherein a thermoelectric conversion efficiency of the ZrCoBi-based thermoelectric material is greater than or equal to 7% at a temperature difference of up to 800 K.
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公开(公告)号:US11713908B2
公开(公告)日:2023-08-01
申请号:US16649496
申请日:2018-10-24
申请人: Sheetak, Inc.
发明人: Uttam Ghoshal , Key Kolle
IPC分类号: F25B21/02 , H10N10/852 , H10N10/853 , H10N10/855 , H10N19/00 , F25B21/04
CPC分类号: F25B21/02 , H10N10/852 , H10N10/853 , H10N10/855 , H10N19/101 , F25B21/04 , F25B2321/023 , F25B2321/0251
摘要: The present disclosure is related to thermoelectric panels and their use in cooling and heating systems. The cooling/heating systems may include a plurality of thermoelectric panels. The panels may include thermoelectric devices embedded between a housing formed by heat conductive layers and edge structures for preserve a low thermal conductivity volume.
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公开(公告)号:US12052920B1
公开(公告)日:2024-07-30
申请号:US18533907
申请日:2023-12-08
发明人: Jiehe Sui , Liangjun Xie , Zihang Liu , Fengkai Guo
CPC分类号: H10N10/01 , B22F1/054 , B22F3/12 , B22F5/006 , B22F9/04 , B22F2009/043 , B22F2201/11 , B22F2201/50 , B22F2301/058 , B22F2301/10 , B22F2301/255 , B22F2304/05 , H10N10/853
摘要: The present disclosure provides a preparation method of a contact material with high thermal stability and low contact resistance based on an MgAgSb-based thermoelectric material and relates to the field of the contact materials preparation. The present disclosure aims to solve the problem of failure to achieve long-term stability for the MgAgSb/Mg3Bi2 device due to the fact that a contact material used by MgAgSb is Ag and MgAgSb may easily yield Ag3Sb in an Ag-rich environment at present. The method includes: at step 1, preparing MgCuSb nano-powder; at step 2, preparing MgCu0.1Ag0.87Sb0.99 nano-powder; at step 3, preparing MgCu0.1Ag0.87Sb0.99—Mg3.2Bi1.5Sb0.5 thermoelectric generation device. The present disclosure is applied to preparation of a contact material with high thermal stability and low contact resistance based on an MgAgSb-based thermoelectric material.
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