公开(公告)号：US07268384B2

公开(公告)日：2007-09-11

申请号：US11292028

申请日：2005-12-01

申请人： Kunal R. Parekh ,  Byron N. Burgess

发明人： Kunal R. Parekh ,  Byron N. Burgess

IPC分类号： H01L29/17 ,  H01L27/84 ,  H01L27/75 ,  H01L27/85 ,  H01L27/86 ,  H01L27/88 ,  H01L27/90 ,  H01L27/91 ,  H01L27/97

CPC分类号： H01L21/76897 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76895 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10888 ,  H01L27/10894 ,  Y10S257/905 ,  Y10S257/906 ,  Y10S257/907

摘要： The invention includes methods of forming memory circuitry. In one implementation, a semiconductor substrate includes a pair of word lines having a bit node received therebetween. A bit node contact opening is formed within insulative material over the bit node. Sacrificial plugging material is formed within the bit node contact opening between the pair of word lines. Sacrificial plugging material is removed from the bit node contact opening between the pair of word lines, and it is replaced with conductive material that is in electrical connection with the bit node. Thereafter, the conductive material is formed into a bit line.

摘要翻译： 本发明包括形成存储器电路的方法。 在一个实施方案中，半导体衬底包括一对在其间接收的位节点的字线。 在位节点上的绝缘材料内形成位节点接触开口。 牺牲性封堵材料形成在一对字线之间的位节点接触开口内。 牺牲性封堵材料从一对字线对之间的位节点接触开口移除，并由与位节点电连接的导电材料代替。 之后，将导电材料形成为位线。

公开(公告)号：US07157785B2

公开(公告)日：2007-01-02

申请号：US10928927

申请日：2004-08-27

申请人： Manabu Takei ,  Tatsuya Naito ,  Michio Nemoto

发明人： Manabu Takei ,  Tatsuya Naito ,  Michio Nemoto

IPC分类号： H01L27/85 ,  H01L27/102 ,  H01L29/70 ,  H01L31/11 ,  H01L31/07

CPC分类号： H02M7/003 ,  H01L29/0696 ,  H01L29/7395 ,  H01L29/872

摘要： A semiconductor device is disclosed that reduces the reverse leakage current caused by reverse bias voltage application and reduces the on-voltage of the IGBT. A two-way switching device using the semiconductor devices is provided, and a method of manufacturing the semiconductor device is disclosed. The reverse blocking IGBT reduces the reverse leakage current and the on-voltage by bringing portions of an n−-type drift region 1 that extend between p-type base regions and an emitter electrode into Schottky contact to form Schottky junctions.

摘要翻译： 公开了一种半导体器件，其减少由反向偏置电压施加引起的反向泄漏电流并且降低IGBT的导通电压。 提供了使用半导体器件的双向开关器件，并且公开了制造半导体器件的方法。 反向阻断IGBT通过将p型基极区域和发射极电极之间延伸的类型漂移区域1的部分引入肖特基接触来形成反向漏电流和导通电压，形成 肖特基路口。