公开(公告)号：US4147948A

公开(公告)日：1979-04-03

申请号：US903603

申请日：1978-05-08

Applicant: Kei-Hsiung Yang

Inventor： Kei-Hsiung Yang

IPC: G01T1/29 ,  G03G15/054 ,  H01J29/38 ,  H01J39/06 ,  H01J31/49

CPC classification number: G01T1/2935 ,  G03G15/0545 ,  H01J29/385

Abstract: Apparatus for X-ray radiography includes a conductive cathode, receiving X-radiation differentially attenuated by passage through an object to be studied, and a conductive anode spaced from the cathode and bearing a sheet of insulative material upon which a charge image of the object is to be formed; and a structured photocathode extending from the cathode towards the anode. The photocathode, formed of cesium iodide and the like, is of relative great thickness and surface area to have large X-ray quantum absorption and photoelectron emission, whereby a lower exposure dosage of X-radiation is required for a radiographic exposure. A plurality of different photocathode structures are disclosed.

Abstract translation: 用于X射线摄影的装置包括导电阴极，接收通过待研究对象差异衰减的X辐射，以及与阴极间隔开的导电阳极，并承载一块绝缘材料，物体的电荷图像为 要形成 以及从阴极向阳极延伸的结构化光电阴极。 由碘化铯等形成的光电阴极具有相当大的厚度和表面积，具有大的X射线量子吸收和光电子发射，因此放射照相曝光需要较低的X射线曝光量。 公开了多种不同的光阴极结构。

公开(公告)号：US4103199A

公开(公告)日：1978-07-25

申请号：US695489

申请日：1976-06-14

Applicant: Charles Redman

Inventor： Charles Redman

IPC: H01J9/20 ,  H01J29/10 ,  H01J31/08 ,  H01J43/24 ,  H01J39/06 ,  H01J31/49

CPC classification number: H01J43/246 ,  H01J29/10 ,  H01J31/08 ,  H01J9/20

Abstract: An electronic device for processing optic, infrared or electronic signals three dimensions, that is, area and time. The device features an amplification function and includes the use of melt grown oxide metal ceramic substrate material which allows high frequency operation and utilizes microchannel amplifier techniques to reduce operational charge buildup.

公开(公告)号：US3959680A

公开(公告)日：1976-05-25

申请号：US544016

申请日：1975-01-24

Applicant: John J. Morales

Inventor： John J. Morales

IPC: H01J43/06 ,  H01J43/12 ,  H01J43/22 ,  H01J39/06 ,  H01J39/02

CPC classification number: H01J43/12 ,  H01J43/22

Abstract: A single photomultiplier tube having four sensing areas each of which produces its own independent electrical signal that is related to the quantity of sensed matter that impinges on its area.

Abstract translation: 具有四个感测区域的单个光电倍增管，每个感测区域产生与其在其区域上撞击的感测物质的量相关的其独立的电信号。

公开(公告)号：US3858074A

公开(公告)日：1974-12-31

申请号：US30405072

申请日：1972-11-06

Applicant: MATSUSHITA ELECTRIC IND CO LTD

Inventor： FUKAI M ,  FUJIWARA S ,  SERIZAWA H ,  EGUCHI O ,  KURAMOTO Y

IPC: H01J29/45 ,  H01L31/109 ,  H01J39/06 ,  H01L9/00

CPC classification number: H01J29/45 ,  H01L31/109

Abstract: A photoelectric transducer element having high photo and spectral sensitivity in which a material with an energy band gap larger than that of a photoelectric transducer film is interposed between the photoelectric transducer film and a transparent conductive film.

Abstract translation: 具有光电转换膜和透明导电膜之间的能量带隙大于光电转换膜的材料的光源和光谱灵敏度高的光电转换元件。

公开(公告)号：US3666547A

公开(公告)日：1972-05-30

申请号：US3666547D

申请日：1970-03-30

Applicant: PHILIPS CORP

Inventor： MURPHY THOMAS

IPC: H01J9/12 ,  H01J39/06

CPC classification number: H01J9/12

Abstract: A METHOD OF MANUFACTURING AN ELECTRIC DISCHARGE TUBE HAVING A PHOTOCATHODE IN WHICH A SOURCE OF THE PHOTOCATHODE MATERIAL COATED WITH A SEALANT INERT TO THE PHOTOCATHODE MATERIAL IS PLACED WITHIN AN EVACUATED ENVELOPE WHICH IS THEN HEATED FIRST TO A BAKE-OUT TEMPERATURE AND THEN TO A HIGHER CATHODE-FORMING TEMPERATURE.

公开(公告)号：US4150315A

公开(公告)日：1979-04-17

申请号：US903605

申请日：1978-05-08

Applicant: Kei-Hsiung Yang

Inventor： Kei-Hsiung Yang

IPC: G01T1/29 ,  G03G15/054 ,  H01J29/38 ,  H01J39/06 ,  H01J39/02

CPC classification number: G01T1/2935 ,  G03G15/0545 ,  H01J29/385

Abstract: Apparatus for X-ray radiography includes a conductive cathode, receiving X-radiation differentially attenuated by passage through an object to be studied, and a conductive anode spaced from the cathode and bearing a sheet of insulative material upon which a charge image of the object is to be formed; and a structured photocathode extending from the cathode towards the anode. The photocathode, formed of cesium iodide and the like, is of relative great thickness and surface area to have large X-ray quantum absorption and photoelectron emission, whereby a lower exposure dosage of X-radiation is required for a radiographic exposure. A plurality of different photocathode structures are disclosed.

公开(公告)号：US4107564A

公开(公告)日：1978-08-15

申请号：US579227

申请日：1975-05-20

Applicant: Alexandr Ivanovich Klimin ,  Alexandr Alexeevich Mostovsky ,  Rafail Lvovich Nemchenok

Inventor： Alexandr Ivanovich Klimin ,  Alexandr Alexeevich Mostovsky ,  Rafail Lvovich Nemchenok

IPC: H01J9/233 ,  H01J1/34 ,  H01J9/12 ,  H01J40/06 ,  H01L31/00 ,  H01J39/00 ,  H01J39/06

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A photoemitter sensitive in the optical range of wavelengths comprises, according to the invention, a substrate made from p-type semiconductor materials of a group of chemical compounds A.sup.II B.sup.IV C.sub.2.sup.V, where A.sup.II are elements belonging to the second subgroup of group II: zinc and cadmium, B.sup.IV are elements belonging to the second subgroup of group IV: germanium, silicon and tin, C.sub.2.sup.V are elements belonging to the second subgroup of group V: phosphorus and arsenic, and a coating of cesium and oxygen. Homogeneity of the bulk and surface properties of the emitter substrate provides high sensitivity in the near-threshold region of photosensitivity corresponding to the width of the forbidden band of the photoemitter substrate.

Abstract translation: 根据本发明，在波长的光学范围内敏感的光电探测器包括由一组化合物AIIBIVC2V的p型半导体材料制成的衬底，其中AII是属于第二组的第二亚组的元素：锌和镉， BIV是属于第IV组第二亚组的元素：锗，硅和锡，C2V是属于第V族第二亚组的元素：磷和砷，以及铯和氧的涂层。 发射极衬底的体积和表面性质的均匀性在对应于光发射器衬底的禁带的宽度的光敏性的近阈值区域中提供高灵敏度。

公开(公告)号：US3958143A

公开(公告)日：1976-05-18

申请号：US449292

申请日：1974-03-08

Applicant: Ronald L. Bell

Inventor： Ronald L. Bell

IPC: H01J1/34 ,  H01J39/06 ,  H01J31/26

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A long wavelength photoemitter, for example a III-V semiconductor, having a work function reduction activation layer thereon, with means for overcoming the energy barrier between the semiconductor conduction band edge and the vacuum comprising means for thermally energizing the photoexcited electrons in the conduction band from a lower energy level therein to a higher "metastable" energy level in which they may reside for a sufficient time such that the electrons can pass with high probability from the elevated energy level into the vacuum over the energy barrier. In one embodiment, promotion of electrons to this higher energy level in the conduction band results from proper selection of the semiconductor alloy with conduction band levels favoring such room temperature thermal excitation. In another embodiment, a Schottky barrier is formed between the semiconductor emitter surface and the activation layer, by means of which an internal electric field is applied to the cathode resulting in high effective electron temperature for energy level transfer analogous to the intervalley electron transfer process of the Gunn effect. In yet other embodiments, composite semiconductor bodies are fabricated in which one region may advantageously be designed for efficient absorption of long-wavelength photons, and another for efficient operation of the promotion mechanism, which together assure a high quantum efficiency. Other properties of the biased promotion layer may be used to minimize emission of electrons which have been excited by purely thermal means, thus providing a low dark current, usually considered to be incompatible with long-wavelength infrared response.

公开(公告)号：US3714491A

公开(公告)日：1973-01-30

申请号：US3714491D

申请日：1970-04-13

Applicant: RCA LTD

Inventor： MC INTYRE R ,  SPRINGINGS H

IPC: G01J1/02 ,  G01S3/783 ,  H01L31/02 ,  H01L31/103 ,  H01L31/16 ,  H01J39/06 ,  H01L15/06

CPC classification number: G01S3/783 ,  H01L31/02024 ,  H01L31/103

Abstract: A quadrant photodiode including a flat substrate of high resistivity semiconductor material, such as silicon, of one conductivity type having a thin region of the one conductivity type within and extending across one surface thereof and four quadrant shaped regions of the opposite conductivity type in its other surface. The quadrant shaped regions are arranged in a circle with the straight edges of adjacent quadrants being in closely spaced relation. The surface of the substrate having the one conductivity type region therein is provided with V-shaped grooves which are directly opposed to and extend along the spaces between the edges of the quadrant-shaped regions. The surfaces of the grooves serve to refract the light which is incident on the surface toward the quadrant-shaped regions so as to prevent optical cross-talk between the quadrant-shaped regions.

Abstract translation: 一个象限光电二极管，包括一个导电类型的高电阻率半导体材料（如硅）的平坦基片，其中一个导电类型的薄区域在其一个表面内延伸，并在其另一个表面延伸，另一个导电类型的四个象限区域在另一个 表面。 象限形状区域被布置成圆形，相邻象限的直边缘处于紧密间隔的关系。 其中具有一个导电类型区域的基板的表面设置有与四边形区域的边缘之间的空间直接相对且延伸的V形槽。 槽的表面用于将入射在表面上的光朝向四分之一区域折射，以防止象限区域之间的光学串扰。

公开(公告)号：US3588570A

公开(公告)日：1971-06-28

申请号：US3588570D

申请日：1968-04-29

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： O'KEEFFE TERENCE W

IPC: H01J1/34 ,  H01J40/06 ,  H01J39/06

CPC classification number: H01J40/06 ,  H01J1/34 ,  H01J2201/3425 ,  Y10T428/24058

Abstract: A SHADOW MASK PARTICULARLY FOR USE WITH ULTRAVIOLET SENSITIVE PHOTOCATHODES IS PROVIDED OF A MATERIAL THAT DOES NOT TRANSMIT ULTRAVIOLET RADIATION AND WHICH, FURTHERMORE, DOES NOT ABSORB OTHER WAVELENTH RADIATION, SUCH AS VISIBLE. THIS PERMITS THE PHOTOCATHODE TO BE IMMEDIATELY ADJACENT THE MASK BECAUSE WHEN EXPOSED BY A HIGH INTENSITY LIGHT SOURCE APPRECIABLE HEATING IN THE MASK MATERIAL THAT WOULD DAMAGE THE PHOTOCATHODE DOES NOT OCCUR. THE MASK MAY BE, FOR EXAMPLE, AN ULTRAVIOLET ABSORBER, SUCH AS TITANIUM IONS IN A TITANIUM OXIDE.