Abstract:
A device for correcting third-order spherical aberration in the objective lens of an electron microscope, including an objective lens and a correction device which is formed by two hexapoles and a round-lens doublet arranged therebetween having two round lenses with the same focal length, whereby a single round lens (3) is arranged between the objective lens (2) and the correction device (1) in such a way that a parallel optical path hits the correction device (1) and the coma-free plane (6) of the objective lens is represented on the plane of the first hexapole (8) of the correction device (1) or two round lenses with different focal lengths are arranged between the objective lens and the correction device, whereby the distance between the round lens (14) close to the objective and the coma-free plane (16) of the objective and the distance between the round lens (15) close to the correction device and the coma-free plane (17) of the correction device is the same is terms of focal length and the distance between both round lenses (14, 15) is equal to the sum of their focal lengths.
Abstract:
The invention relates to a method for eliminating axial image deformations &agr;n in electron optical systems, where the extra-axial image deformation of the order n+m with the same behavior in &agr;n, which thus has the form &agr;n&ggr;m, is modified by shifting or tilting the beam path towards the optical axis until compensation of the axial image deformation has been achieved, whereby &ggr; describes the extra-axial image coordinate as a complex number in both sections. The invention also relates to an adjustment method for eliminating all first-, second- and third-order axial image deformations during correction of the third-order spherical aberration in electron optical systems with hexapoles.
Abstract:
An assembly and method for improved scanning electron microscope analysis of semiconductor devices include a structure including a first layer and a second layer, the second layer shrinking substantially when the structure is examined with a scanning electron microscope having a beam energy of at least 1.5 KeV, and at least part of the surface of the structure coated with a material composed of Iridium, wherein the coating is of sufficient thickness to reduce shrinkage of the second layer to approximately a predetermined amount when the structure is examined with a scanning electron microscope having a beam energy of at least 1.5 KeV.
Abstract:
A method and apparatus (11) for irradiating an electron beam, wherein a triangular wave generator (22) provides a triangular wave current to a scanning coil (17) to move the electron beam in a first scanning direction (Y), while a square wave generator (21) provides a square wave current to a deflecting coil (16) to move the electron beam in a second scanning direction (X) orthogonal to the first scanning direction (Y). The triangular wave current provided from the triangular wave generator is modulated to cancel the effects of hysteresis in the scanning coil. Further, the rise of the square wave current is synchronized and shifted a prescribed interval in relation to the peak values of the triangular wave current in order to distribute the reversing points on the electron beam path along the second scanning direction.
Abstract:
There is disclosed a transmission electron microscope that uses an accelerating voltage on the order of 200 kV but is capable of correcting spherical aberration. This microscope has an illumination lens and an auxiliary illumination lens that are interlocked to form an electron diffraction image of a specimen at a fixed position independent of the current density on the specimen. A first hexapole element is mounted at the position where the electron diffraction image is formed. A second hexapole element is placed in a position conjugate with the first hexapole element. A doublet lens is disposed between these two hexapole elements.
Abstract:
A deflection system is presented for use in a lens arrangement of a charged particle beam column for inspecting a sample. The system comprises a magnetic deflector operable to create a magnetic field, and a pole piece assembly at least partly accommodated within the magnetic field. The pole piece assembly has a portion made of a soft magnetic material and is formed with an opening for a charged particle beam propagation therethrough. The deflection system allows for conducting the magnetic field created by the magnetic deflector through the pole piece assembly towards the opening in the pole piece assembly. This enables to increase the magnetic field value in the vicinity of the sample at the optical axis of the lens arrangement at a given electric current through the excitation coils of the magnetic deflector, without a need to increase a working distance.
Abstract:
An improved objective lens for a charged particle beam device is constituted by, among other things, a magnetic lens that creates a first magnetic field for focussing the charged particle beam onto the specimen. Furthermore, a deflector is integrated into the magnetic lens by providing at least one additional coil arrangement that creates a second magnetic field used to deflect the charged particle beam. Thereby, the second magnetic field is guided through at least one of the pole pieces of the magnetic lens. The present invention also provides an improved column for a charged particle beam device including the improved objective lens.