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    Epoxy bonded silicon carbide lightning-protection valve
    1.
    发明授权
    Epoxy bonded silicon carbide lightning-protection valve 失效
    环氧粘结碳化硅防护阀

    公开(公告)号：US4074221A

    公开(公告)日：1978-02-14

    申请号：US728315

    申请日：1976-09-30

    申请人： James W. Milligan

    发明人： James W. Milligan

    IPC分类号： H01C7/118 ,  H01C7/10

    CPC分类号： H01C7/118

    摘要： Lightning protection is provided by an electronic valve molded mainly of silicon carbide powder. The manufacturing cost and high reject rate of previous ceramic bonding is greatly reduced by bonding with epoxy resin, the mixture being pressure molded. The surface-tracking characteristic of epoxy resin is rendered harmless by covering the periphery of the molded piece with insulation and by inclusion of alumina powder in the mix. The insulating sleeve is extended to provide a hood preventing harmful migration of an ionized arcing path.

    Chip type varistor and ceramic compositions for the same
    8.
    发明授权
    Chip type varistor and ceramic compositions for the same 失效
    片式压敏电阻和陶瓷组合物相同

    公开(公告)号：US5976420A

    公开(公告)日：1999-11-02

    申请号：US21726

    申请日：1998-02-11

    申请人： Kazutaka Nakamura ,  Kazuhiro Kaneko

    发明人： Kazutaka Nakamura ,  Kazuhiro Kaneko

    IPC分类号： C04B35/453 ,  H01C7/10 ,  H01C7/112 ,  H01C7/18 ,  H01B1/04 ,  H01C7/118

    CPC分类号： H01C7/18 ,  H01C7/112

    摘要： There is provided a chip type varistor having a small electrostatic capacity, high voltage non-linearity, and high voltage suppressing capability and surge resistance. The chip type varistor is a layered body formed by a plurality of ceramic layers mainly composed of SiC containing at least two elements, in the form of oxides, selected from among Si, Bi, Pb, B and Zn, an inner electrode layer interposed between the ceramic layers of the layered body, and an outer electrode formed on the surface of the layered body and electrically connected to the inner electrode layer.

    摘要翻译： 提供了具有小静电电容，高电压非线性，高电压抑制能力和浪涌电阻的片式变形电阻器。 芯片型变阻器是由主要由包含Si，Bi，Pb，B和Zn中的氧化物形式的至少两种元素的主要由SiC构成的多个陶瓷层形成的层叠体，位于 层叠体的陶瓷层和形成在层叠体的表面上并与内部电极层电连接的外部电极。