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    Polymer, resist material and patterning processing
    1.
    发明授权
    Polymer, resist material and patterning processing 有权
    聚合物，抗蚀材料和图案加工

    公开(公告)号：US07157207B2

    公开(公告)日：2007-01-02

    申请号：US10933013

    申请日：2004-09-01

    申请人： Kenji Funatsu ,  Tsunehiro Nishi ,  Shigehiro Nagura

    发明人： Kenji Funatsu ,  Tsunehiro Nishi ,  Shigehiro Nagura

    IPC分类号： G03F7/39 ,  G03F7/30 ,  C08F124/00 ,  C08F134/02 ,  C08F24/00

    CPC分类号： G03F7/0397 ,  C08F220/26 ,  Y10S430/111

    摘要： Provided is a polymer useful as a base resin of a resist material featuring a high resolution, patterns with less sidewall roughness, practically acceptable etching resistance, and a substantial margin allowed for heat treatment temperature after exposure. The polymer has a weight-average molecular weight of from 1,000 to 50,000 and comprises at least one repeating unit of formula (1) below, at least one repeating unit of formula (2) below and at least one repeating unit of formula (3) below. A resist material comprising the polymer is also provided. In addition, provided is a pattern formation process comprising steps of applying the resist material onto a substrate, heating the film, exposing the heated film through a photomask to high energy radiation or electron beam, heating the exposed film and then developing with a developer

    摘要翻译： 提供了可用作抗蚀剂材料的基础树脂的聚合物，其特征在于具有高分辨率，具有较小侧壁粗糙度的图案，实际上可接受的耐蚀刻性，以及曝光后允许的热处理温度的显着余量。 所述聚合物的重均分子量为1,000至50,000，并且包含至少一种下式（1）的重复单元，至少一个下式的式（2）的重复单元和至少一个式（3）的重复单元， 下面。 还提供了包含聚合物的抗蚀剂材料。 此外，提供了一种图案形成方法，其包括以下步骤：将抗蚀剂材料施加到基底上，加热膜，将加热的膜通过光掩模曝光到高能量辐射或电子束，加热曝光的膜，然后用显影剂显影

    Process for structuring a photoresist by UV at less than 160 NM and then aromatic and/or alicyclic amplification
    3.
    发明授权
    Process for structuring a photoresist by UV at less than 160 NM and then aromatic and/or alicyclic amplification 有权
    用于通过UV在小于160Nm构建光致抗蚀剂然后芳族和/或脂环体扩增的方法

    公开(公告)号：US07045274B2

    公开(公告)日：2006-05-16

    申请号：US10285052

    申请日：2002-10-31

    申请人： Jörg Rottstegge

    发明人： Jörg Rottstegge

    IPC分类号： G03F7/20 ,  G03F7/32 ,  G03F7/40 ,  G03F7/39 ,  B01J31/02

    CPC分类号： G03F7/40 ,  G03F7/0392

    摘要： A process amplifies structured resists by utilizing a reaction between a nucleophilic group and an isocyanate group or thiocyanate group to link an amplification agent to a polymer present in the photoresist. The amplification agent includes aromatic and/or cycloaliphatic groups. An isocyanate group or a thiocyanate group and a nucleophilic group form a reaction pair; one of the partners is provided on the polymer and the other partner on the amplification agent. The amplification reaction takes place more rapidly than a linkage to carboxylic anhydride groups. Furthermore, the amplification reaction permits the use of polymers which have high transparency at short wavelengths of less than 200 nm, in particular 157 nm.

    摘要翻译： 一种方法是通过利用亲核基团和异氰酸酯基团或硫氰酸酯基团之间的反应来扩增结构化抗蚀剂，以将扩增剂与存在于光致抗蚀剂中的聚合物连接。 扩增剂包括芳族和/或脂环族基团。 异氰酸酯基或硫氰酸酯基和亲核基团形成反应对; 在聚合物上提供了一个合作伙伴，而在扩增剂上提供了另一个合作伙伴。 扩增反应比与羧酸酐基团的连接发生得更快。 此外，扩增反应允许使用在小于200nm，特别是157nm的短波长下具有高透明度的聚合物。