- 专利标题: Process for silylating photoresists in the UV range
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申请号: US10285050申请日: 2002-10-31
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公开(公告)号: US07045273B2公开(公告)日: 2006-05-16
- 发明人: Jens Ferbitz , Werner Mormann , Jens Rottstegge , Christoph Hohle , Christian Eschbaumer , Michael Sebald
- 申请人: Jens Ferbitz , Werner Mormann , Jens Rottstegge , Christoph Hohle , Christian Eschbaumer , Michael Sebald
- 申请人地址: DE Munich
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Munich
- 代理商 Laurence A. Greenberg; Werner H. Stemer; Ralph E. Locher
- 优先权: DE10153497 20011031
- 主分类号: G03F7/20
- IPC分类号: G03F7/20 ; G03F7/30 ; G03F7/40 ; G03F7/39 ; B01J31/02
摘要:
A process for the amplification of structured resists utilizes a reaction between a nucleophilic group and an isocyanate group or thiocyanate group to link an amplification agent to a polymer present in the photoresist. The isocyanate group or the thiocyanate group in addition to the nucleophilic group form a reaction pair. One of the partners is provided on the polymer and the other partner on the amplification agent. The amplification reaction takes place more rapidly than a linkage to carboxylic anhydride groups. Furthermore, the amplification reaction permits the use of polymers that have high transparency at short wavelengths of less than 200 nm, in particular 157 nm.
公开/授权文献
- US20030124468A1 Process for silylating photoresists in the UV range 公开/授权日:2003-07-03
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