Method and system for fabricating a microelectromechanical system device with a movable portion using anodic etching of a sacrificial layer

    公开(公告)号:US10570011B1

    公开(公告)日:2020-02-25

    申请号:US16117456

    申请日:2018-08-30

    摘要: A method for fabricating a microelectromechanical system device. Submerging a microelectromechanical system device in water. The microelectromechanical system devices include a sacrificial layer deposited on the surface of a substrate between the portion of a structural layer to be freed for movement and a base. Anodically etching the sacrificial layer from the microelectromechanical device to free the portion of the structural layer for movement. A system comprising a solution of water, a microelectromechanical system device including a sacrificial layer of chromium deposited on the surface of a substrate between a portion of a structural layer and a base. The microelectromechanical system device is submerged in the solution of water. An electrode is submerged in the water. The electrode provides a negative bias. A voltage source provides a positive bias to the sacrificial layer of chromium, anodically etching the sacrificial layer of chromium and freeing the portion of the structural layer.

    METHOD FOR CREATING A CHROMIUM-PLATED SURFACE WITH A MATTE FINISH

    公开(公告)号:US20190119823A1

    公开(公告)日:2019-04-25

    申请号:US16230264

    申请日:2018-12-21

    发明人: Jordi Reichert

    摘要: A method for creating a chrome-plated surface having a matte finish that typically includes: controlling a resistance of a current bridge circuit; depositing a first chromium layer on a substrate positioned in a chromium bath, wherein the first chromium layer is deposited by supplying current from a power source that is electrically connected to the substrate and to anodes positioned in the chromium bath; etching the first chromium layer by engaging a current bridge that closes the current bridge circuit; depositing a first intermediate chromium layer, wherein the first intermediate chromium layer is deposited by supplying current from the power source; etching the first intermediate chromium layer, wherein the first intermediate chromium layer is etched by engaging the current bridge; and depositing a final chromium layer, wherein the final chromium layer is deposited by supplying current from the power source.

    Method for obtaining well-defined edge radii on cutting tool inserts in
combination with a high surface finish over the whole insert by
electropolishing technique
    6.
    发明授权
    Method for obtaining well-defined edge radii on cutting tool inserts in combination with a high surface finish over the whole insert by electropolishing technique 失效
    通过电抛光技术在切削刀具刀片上获得良好定义的边缘半径与整个刀片上的高表面光洁度相结合的方法

    公开(公告)号:US5993638A

    公开(公告)日:1999-11-30

    申请号:US862242

    申请日:1997-05-23

    申请人: Ulf Rolander

    发明人: Ulf Rolander

    CPC分类号: B23H9/02 B23H1/08 C25F3/08

    摘要: There is disclosed a method for edge rounding of cutting tool inserts, in combination with a high surface finish over the whole insert, of cemented carbide or titanium-based carbonitride alloys. An electrolytic method is used with an electrolyte which provides an even removal of both binder phase and hard constituent phases. The electrolyte comprises perchloric (HClO.sub.4) or sulphuric (H.sub.2 SO.sub.4) acid, in amounts >15 and

    摘要翻译: 公开了一种用于在硬质合金或钛基碳氮化物合金上切削刀具刀片的边缘圆化与整个刀片上的高表面光洁度相结合的方法。 电解方法与电解质一起使用,其提供粘结相和硬组分相的均匀去除。 在甲醇或其它合适的有机液体中,电解质包含量大于15和<50体积%的高氯酸(HClO4)或硫酸(H 2 SO 4)酸。 该方法比常规机械方法更容易控制,并且特别适用于提供非常小的边缘半径约10微米,并且在整个插入件上结合高表面光洁度,这不能通过机械或其它电解方法来制造。

    Tungsten-quartz seals
    7.
    发明授权
    Tungsten-quartz seals 失效
    钨石英密封

    公开(公告)号:US4452677A

    公开(公告)日:1984-06-05

    申请号:US462836

    申请日:1983-02-02

    IPC分类号: C25F3/08 H01J9/32

    CPC分类号: H01J9/323 C25F3/08

    摘要: Tungsten-to-quartz seals are improved by electrochemically etching drawn, ground tungsten rod until some of the original draw lines appear and then using the so treated rod in the seal formation. The etching is carried out in a solution of NaNO.sub.2 ; NaOH; and H.sub.2 O.

    摘要翻译: 通过电化学蚀刻拉制的钨丝杆直到出现一些原始的拉丝线,然后在密封结构中使用如此处理的棒来改善钨 - 石英密封。 蚀刻在NaNO 2溶液中进行; NaOH; 和H2O。

    Electroetching of a conductive film on an insulating substrate
    10.
    发明授权
    Electroetching of a conductive film on an insulating substrate 失效
    导电膜在绝缘基板上的电化学研究

    公开(公告)号:US3560357A

    公开(公告)日:1971-02-02

    申请号:US3560357D

    申请日:1968-07-26

    申请人: RCA CORP

    发明人: SHAW JOSEPH M

    IPC分类号: C25F3/08 C23B3/04 C23F1/02

    CPC分类号: C25F3/08

    摘要: A TUNGSTEN FILM IS ETCHED ELECTROLYTICALLY IN A SOLUTION WHICH ALSO ACTS AS A CHEMICAL ETCHANT. THE CHEMICAL ACTION OF THE ETCHANT REMOVES THE LAST TRACES OF TUNGSTEN AFTER THE ELECTROLYTIC ETCHING ACTION IS TERMINATED BY BREAK-UP OF THE TUNGSTEN LAYER INTO A NUMBER OF THIS ELECTRICALLY ISOLATED "ISLANDS."