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公开(公告)号:US20240098870A1
公开(公告)日:2024-03-21
申请号:US17948618
申请日:2022-09-20
发明人: Hao SUN , Mingzhe RONG , Yi WU , Yunshun GUO , Hu LONG
CPC分类号: H05H1/42 , H05H1/28 , H05H1/34 , H05H2245/17
摘要: The present disclosure discloses a thermal plasma treatment method for sulfur hexafluoride (SF6) degradation. In the thermal plasma treatment method for SF6 degradation, Ar is input into a thermal plasma generator as a carrier gas; annular electrodes are electrically connected to a direct current power supply to generate an arc plasma region in the presence of the carrier gas Ar; to-be-reacted SF6 and to-be-reacted H2 in a predetermined ratio are input into the arc plasma region to generate hydrogen radicals as well as fluorine radicals, and the hydrogen radicals and the fluorine radicals are bonded with each other to generate HF to inhibit the self-recovery reaction of SF6; and final products include HF and elemental S.
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公开(公告)号:US11786863B1
公开(公告)日:2023-10-17
申请号:US18167906
申请日:2023-02-13
发明人: Qi Qiu , Pengfei Wang , Jiahong Fu , Xingliang Liu , Zhaozhe Deng
CPC分类号: B01D53/32 , B01J19/088 , H05H1/2431 , B01D2259/818 , H05H2245/17
摘要: A low-temperature plasma reactor having an adaptive rotating electrode includes a frame. A reaction tube is arranged inside the frame. A fixing cover is arranged on each of two sides of the frame. The fixing cover defines a through hole communicating with an inside of the reaction tube. The through hole in one of the two sides serves as an air inlet hole, and the through hole in the other one of the two sides serves as an air outlet hole. A rotatable inner electrode is arranged inside the reaction tube, a plurality of groups of discharging needles are arranged on a surface of the inner electrode. A rotating fan is arranged on the inner electrode and is disposed on a side of the air inlet hole. The gas flow drives the inner electrode and the discharging needles to rotate, and a motor drive is not required.
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公开(公告)号:US12101868B2
公开(公告)日:2024-09-24
申请号:US17948618
申请日:2022-09-20
发明人: Hao Sun , Mingzhe Rong , Yi Wu , Yunshun Guo , Hu Long
CPC分类号: H05H1/42 , H05H1/28 , H05H1/34 , H05H2245/17
摘要: The present disclosure discloses a thermal plasma treatment method for sulfur hexafluoride (SF6) degradation. In the thermal plasma treatment method for SF6 degradation, Ar is input into a thermal plasma generator as a carrier gas; annular electrodes are electrically connected to a direct current power supply to generate an arc plasma region in the presence of the carrier gas Ar; to-be-reacted SF6 and to-be-reacted H2 in a predetermined ratio are input into the arc plasma region to generate hydrogen radicals as well as fluorine radicals, and the hydrogen radicals and the fluorine radicals are bonded with each other to generate HF to inhibit the self-recovery reaction of SF6; and final products include HF and elemental S.
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公开(公告)号:US20240096649A1
公开(公告)日:2024-03-21
申请号:US18368422
申请日:2023-09-14
发明人: Wonsu LEE , Hyunseok KIM , Jungdae PARK , Kimoon LEE , Jong-San CHANG
CPC分类号: H01L21/67017 , H05H1/2406 , H05H1/26 , H05H2245/17
摘要: A gas treatment method, including: treating an exhaust gas discharged from a semiconductor process chamber using a gas treatment system; and discharging the treated exhaust gas, wherein the treating of the exhaust gas includes: operating a first thermal oxidizer to treat the exhaust gas discharged from the semiconductor process chamber, the first thermal oxidizer being connected to the semiconductor process chamber and allowing the treated exhaust gas to pass through a plasma processing apparatus connected to the first thermal oxidizer; stopping the operation of the first thermal oxidizer to perform maintenance on the first thermal oxidizer; and wherein the stopping the operation of the first thermal oxidizer comprises: performing maintenance on the first thermal oxidizer; and operating the plasma processing apparatus to treat the exhaust gas discharged from the semiconductor process chamber
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公开(公告)号:US11712657B2
公开(公告)日:2023-08-01
申请号:US17314973
申请日:2021-05-07
申请人: ThrivalTech, LLC
发明人: Garrett Hill
CPC分类号: B01D53/326 , B01D53/32 , B01D53/9459 , F01N3/05 , F01N3/0892 , H05H1/2439 , B01D2257/404 , B01D2258/01 , B01D2258/012 , B01D2259/818 , F01N2240/28 , F01N2470/24 , H05H1/2418 , H05H1/2437 , H05H1/2443 , H05H2245/17
摘要: Systems, methods, and apparatus are contemplated in which a tube cell that produces a dielectric barrier discharge (DBD) is individually configured to minimize the mixing of unwanted byproducts of the generated plasma with an exhaust air stream. The tube cell generates a DBD within a tube cell, such that oxidants or radicals are generated in an environment substantially separated from the exhaust stream. The generated oxidants are directed to intersect with the exhaust stream to minimize the generation of unwanted byproducts. The tube cells are further shaped and arranged in tube cell arrays to alter the flow dynamics of the exhaust stream and the oxidant or radical streams, including mixing of the streams.
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公开(公告)号:US20240316494A1
公开(公告)日:2024-09-26
申请号:US18578877
申请日:2022-07-08
申请人: DAPHNE TECHNOLOGY SA
CPC分类号: B01D53/32 , F01N3/0892 , H05H1/2406 , B01D2257/504 , B01D2258/01 , B01D2258/02 , B01D2258/06 , B01D2259/818 , H05H2242/22 , H05H2245/17
摘要: There is provided a dielectric barrier electrical discharge apparatus and corresponding system and method. The apparatus comprises: at least two electrodes arranged in use to provide at least one anode and at least one cathode, the at least two electrodes being separated to allow a fluid to be present between the electrodes in use, and at least one of the electrodes has a dielectric portion connected to at least part of said electrode; a sub-macroscopic structure connected to at least one of the at least two electrodes and/or to the dielectric portion; and a drive circuit connected to each of the at least two electrodes and arranged in use to establish an electric field between the electrodes, wherein in response to the presence of the electric field between the electrodes, the sub-macroscopic structure is arranged to field-emit electrons and electrical discharge is establishable between the dielectric portion and one of the at least two electrodes, and the drive circuit is further arranged to provide real power to the fluid in use.
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公开(公告)号:US20240181385A1
公开(公告)日:2024-06-06
申请号:US18206179
申请日:2023-06-29
申请人: ThrivalTech, LLC
发明人: Garrett Hill
CPC分类号: B01D53/326 , B01D53/32 , B01D53/9459 , F01N3/05 , F01N3/0892 , H05H1/2439 , B01D2257/404 , B01D2258/01 , B01D2258/012 , B01D2259/818 , F01N2240/28 , F01N2470/24 , H05H1/2418 , H05H1/2437 , H05H1/2443 , H05H2245/17
摘要: Systems, methods, and apparatus are contemplated in which a tube cell that produces a dielectric barrier discharge (DBD) is individually configured to minimize the mixing of unwanted byproducts of the generated plasma with an exhaust air stream. The tube cell generates a DBD within a tube cell, such that oxidants or radicals are generated in an environment substantially separated from the exhaust stream. The generated oxidants are directed to intersect with the exhaust stream to minimize the generation of unwanted byproducts. The tube cells are further shaped and arranged in tube cell arrays to alter the flow dynamics of the exhaust stream and the oxidant or radical streams, including mixing of the streams.
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公开(公告)号:US11931682B2
公开(公告)日:2024-03-19
申请号:US17405270
申请日:2021-08-18
申请人: EDWARDS VACUUM LLC
发明人: Imad Mahawili
IPC分类号: H01J37/32 , B01D47/02 , B01D47/10 , B01D50/00 , B01D53/00 , B01D53/32 , B01D53/75 , B08B9/032 , C23C16/44 , H05H1/46
CPC分类号: B01D47/021 , B01D47/10 , B01D50/00 , B01D53/007 , B01D53/32 , B08B9/0321 , C23C16/4412 , H01J37/32844 , B01D53/005 , B01D2259/80 , B01D2259/818 , H05H1/4652 , H05H2245/17 , Y10S55/30
摘要: A semiconductor waste abatement system for a semiconductor processing system includes a vacuum pump, an abatement apparatus having an abatement chamber in fluid communication with a source of semiconductor waste gas from the semiconductor processing chamber, and with the abatement chamber configured to ionize the waste gas and to exhaust ionized gas. The abatement system further includes a filter apparatus with a filter chamber, which forms a liquid reservoir. The inlet of the filter apparatus is in fluid communication with the outlet of the abatement chamber and the liquid reservoir, and the outlet of the filter apparatus is in communication with the inlet of the vacuum pump, wherein the filter chamber is under a vacuum, and wherein semiconductor waste gas is ionized in the abatement chamber and then filtered by the filter apparatus prior to input to the vacuum pump.
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公开(公告)号:US20230274952A1
公开(公告)日:2023-08-31
申请号:US18049954
申请日:2022-10-26
发明人: WONSU LEE , Kimoon LEE , Seungjum LEE , Jong san CHANG , Joungwoo HAN
IPC分类号: H01L21/67 , H05H1/24 , F23C13/00 , F23J15/04 , F23J15/06 , F23J15/08 , B01D53/14 , B01D53/18 , B01D53/86 , B01D53/32 , B01D53/75 , B01D45/16
CPC分类号: H01L21/67017 , H05H1/2406 , F23C13/00 , F23J15/04 , F23J15/06 , F23J15/08 , B01D53/1493 , B01D53/1406 , B01D53/1431 , B01D53/18 , B01D53/869 , B01D53/32 , B01D53/75 , B01D45/16 , H05H2245/17 , H05H2242/10 , F23J2219/40 , F23G2204/201 , F23G2202/60 , B01D2252/103 , B01D2259/818
摘要: A gas treatment system includes a first scrubber, a regenerative catalytic oxidizer (RCO) that treats gas that passes through the first scrubber, a second scrubber that treats the gas that passed through the regenerative catalytic oxidizer, and a dielectric barrier discharge (DBD) plasma reactor that treats the gas that passed through the second scrubber. The regenerative catalytic oxidizer includes a two-bed regenerative catalytic reactor.
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