摘要:
A voltage-to-current converting circuit configured to convert an input voltage signal into a pair of complementary current signals by use of a current mirror, comprises a transistor 4 connected in the form of a diode and connected in series with a constant current source 21, a transistor 3 having a collector connector to a collector of the transistor 4, a transistor 2 having a base connected to a base of the transistor 3 so as to form a current mirror in cooperation with the transistor 3, the base of the transistor 2 being connected to receive an input voltage signal Vin, a bias circuit 5 for biasing the base of the transistors 3 and 2, and a transistor 1 having a base connected to a base of the transistor 4 so as to form a current mirror in cooperation with the transistor 4. The input voltage Vin is converted into a collector current I1 of the transistor 1 and a collector current I2 of the transistor 2. Thus, the voltage-to-current converting circuit is composed of only NPN transistors, so that a manufacturing process is simplified. In addition, since no emitter follower is included, a low voltage operation can be realized. This circuit can be applied to a multiplier, frequency doubler, a frequency mixer, etc.
摘要:
A memory sensing circuit and method that can achieve both a wide read margin and a fast read time. Roughly described, a target cell draws a target cell current from a first node when selected. The target cell current depends on the charge level stored in the target cell. A reference cell draws a reference cell current from a second node when selected, and a current difference generator generates into a third node a third current flow positively dependent upon the difference between the target cell current and the reference cell current. The current difference generator also generates into a fourth node a fourth current flow negatively dependent upon the difference between the target cell current and the reference cell current. A sense amplifier has its first input connected to the third node and a second input connected to the fourth node.
摘要:
A memory sensing circuit and method that can achieve both a wide read margin and a fast read time. Roughly described, a target cell draws a target cell current from a first node when selected. The target cell current depends on the charge level stored in the target cell. A reference cell draws a reference cell current from a second node when selected, and a current difference generator generates into a third node a third current flow positively dependent upon the difference between the target cell current and the reference cell current. The current difference generator also generates into a fourth node a fourth current flow negatively dependent upon the difference between the target cell current and the reference cell current. A sense amplifier has its first input connected to the third node and a second input connected to the fourth node.
摘要:
A Class "B" amplifier circuit in which Class "B" conversion takes place in a converter portion of the circuit in combination with a differential amplifier input circuit, rather than in the output stage. The converter modulates the DC bias current supplied to the differential amplifier input circuit as a function of the input signal, in order to achieve Class "B" operation. The output amplifier portion of the circuit includes a pair of complementary, series-connected transistors, each of which is connected in a common-emitter configuration. The disclosed circuit provides a high input impedance and excellent dynamic range.