公开(公告)号：US20170294375A1

公开(公告)日：2017-10-12

申请号：US15509575

申请日：2015-07-16

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Haruhiko TERADA ,  Makoto KITAGAWA

IPC: H01L23/528 ,  H01L27/22 ,  H01L27/24

CPC classification number: H01L23/528 ,  G11C13/0007 ,  G11C13/0011 ,  G11C19/0883 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/222 ,  H01L27/224 ,  H01L27/2409 ,  H01L27/2481 ,  H01L27/28 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146 ,  H01L51/05

Abstract: In a memory cell unit array, memory cell units each constituted of first wires, second wires, and a nonvolatile memory cell are arranged in a two-dimensional matrix form in a first direction and a second direction. Each of the memory cell units includes a control circuit below it. The control circuit is constituted of a first control circuit and a second control circuit. The second wires are connected to the second control circuit. Some of the first wires that constitute the memory cell unit are connected to the first control circuit that constitutes this memory cell unit. Others of the first wires are connected to the first control circuit that constitutes an adjacent memory cell unit adjacent thereto in the first direction.

公开(公告)号：US4748590A

公开(公告)日：1988-05-31

申请号：US721366

申请日：1985-04-09

Applicant: Jean-Marc Fedeli ,  Joel Magnin

Inventor： Jean-Marc Fedeli ,  Joel Magnin

IPC: G11C11/14 ,  G11C19/08

CPC classification number: G11C19/0883 ,  G11C19/0858

Abstract: In a magnetic bubble memory having a first system of aligned ion-implanted patterns and a second system of aligned ion-implanted patterns, a swap gate having a transfer conductor for transferring a magnetic bubble from the second system to the first system, and an erase conductor for erasing the bubble to be replaced on the first system.

Abstract translation: 在具有对准的离子植入图案的第一系统和对准的离子植入图案的第二系统的磁性气泡存储器中，具有用于将磁性气泡从第二系统传送到第一系统的转移导体的交换门，以及擦除 导体，用于擦除在第一个系统上要更换的气泡。

公开(公告)号：US4525807A

公开(公告)日：1985-06-25

申请号：US571484

申请日：1984-01-17

Applicant: Hubert Jouve ,  Joel Magnin

Inventor： Hubert Jouve ,  Joel Magnin

IPC: G11C11/14 ,  G11C19/08

CPC classification number: G11C19/0866 ,  G11C19/0875 ,  G11C19/0883

Abstract: A magnetic bubble store, using adjoining non-implanted motifs as bubble-propagating motifs, the store comprising 3n identical, electrically interconnected storage devices, n being a positive integer, which are produced on an identical circuit chip and each comprise minor loops for storing the bubbles, at least one major loop acting as an access loop for the minor loops, first electrical component enabling bubbles to be transferred from the minor loops to the major loop and vice versa, a second electrical component enabling bubbles to be produced on the major loop, and a third electrical component enabling the bubbles on the major loop to be detected, the third, identical component, each formed by an electric conductor for bubble extension and contraction and a magneto-resistive element, being disposed in directions making an angle of 120.degree. with one another.

Abstract translation: 一个磁性气泡存储器，使用毗邻的非植入图案作为气泡传播图案，该存储器包括3n个相同的，电互连的存储装置，n是正整数，其在相同的电路芯片上产生，并且每个都包含用于存储 气泡，至少一个主循环用作次循环的进入回路，第一电气部件使得气泡能够从次要环路传递到主回路，反之亦然，第二电气部件能够在主回路上产生气泡 以及能够检测主回路上的气泡的第三电气部件，由用于气泡伸展和收缩的电导体形成的第三相同部件和磁阻元件，其设置成120度的角度 DEG与彼此。

公开(公告)号：US4493054A

公开(公告)日：1985-01-08

申请号：US251759

申请日：1981-04-07

Applicant: Mokhtar Boshra-Riad ,  Jean-Marc Fedeli ,  Hubert Jouve ,  Daniel Mauduit

Inventor： Mokhtar Boshra-Riad ,  Jean-Marc Fedeli ,  Hubert Jouve ,  Daniel Mauduit

IPC: G11C11/14 ,  G11C19/08

CPC classification number: G11C19/0816 ,  G11C19/0883

Abstract: A magnetic bubble store including at least two series of longitudinally oriented major shift registers and a rotating magnetic field for producing a displacement of the bubbles in the minor registers. The series of minor registers are respectively arranged on either side of a transverse boundary. The minor registers of each of the series are constituted by motifs defined by ion implantation in a magnetic garnet layer. On either side of the boundary, these motifs define complementary distributions of implanted areas and non-implanted area.

Abstract translation: 一种磁性气泡储存器，其包括至少两个纵向取向的主移位寄存器和用于产生次要寄存器中的气泡位移的旋转磁场。 一系列次要寄存器分别布置在横向边界的两侧。 每个系列的次要寄存器由磁性石榴石层中的离子注入限定的图案构成。 在边界的两边，这些图案定义了植入区域和非植入区域的互补分布。

公开(公告)号：US4384344A

公开(公告)日：1983-05-17

申请号：US332784

申请日：1981-12-21

Applicant: Leonard R. Tocci

Inventor： Leonard R. Tocci

IPC: G11C19/08

CPC classification number: G11C19/0875 ,  G11C19/0883

Abstract: An improved layout for single level, block access, magnetic bubble domain chips is provided. In the improved layout, single level devices and conductors are provided. The improvement resides primarily in utilizing conductors which are arranged in a straight-line configuration with the magnetic bubble domain propagation paths arranged in a meandering configuration. This arrangment is contrary to existing techniques and permits enhanced operation of the magnetic bubble domain system.

Abstract translation: 提供了单级，块访问，磁泡区域芯片的改进布局。 在改进的布局中，提供单级设备和导体。 改进主要在于利用以直线构型布置的导体，其中气泡区传播路径以蜿蜒形式布置。 这种布置与现有技术相反，并允许增强磁泡区域系统的操作。

公开(公告)号：US4263661A

公开(公告)日：1981-04-21

申请号：US047438

申请日：1979-06-11

Applicant: Thomas T. Chen ,  Isoris S. Gergis

Inventor： Thomas T. Chen ,  Isoris S. Gergis

IPC: G11C11/14 ,  G11C19/08

CPC classification number: G11C19/0858 ,  G11C19/0883

Abstract: There is shown and described a magnetic bubble domain device organization using certain propagation elements which have expanded size relative to the remainder of the propagation elements in order to improve device or system operation.

Abstract translation: 示出并描述了使用某些传播元件的磁性气泡区域设备组织，其相对于传播元件的其余部分具有扩展的尺寸，以便改进设备或系统操作。

公开(公告)号：US4175289A

公开(公告)日：1979-11-20

申请号：US912805

申请日：1978-06-05

Applicant: Thomas W. Collins

Inventor： Thomas W. Collins

IPC: G11C11/14 ,  G11C19/08 ,  H03K17/84 ,  H03K19/168

CPC classification number: H03K19/168 ,  G11C19/0883 ,  H03K17/84

Abstract: A magnetic bubble switch operates in a drive-to-transfer mode when a rotating magnetic field is applied. The switch has a magnetic element in the shape that defines the letter "Y" having two arms and a stem. The switch has at least one serration on the arm of the Y in the vicinity of the stem. The switch has a conductor which is positioned across the end of the stem of the Y. A magnetic element is positioned so as to form a gap with the stem of the Y.

Abstract translation: 当施加旋转磁场时，磁性气泡开关在驱动转移模式下工作。 该开关具有限定具有两个臂和杆的字母“Y”的形状的磁性元件。 开关在杆附近的Y臂上至少有一个锯齿。 开关具有穿过Y的杆的端部的导体。磁性元件被定位成与Y的杆形成间隙。

公开(公告)号：US4164029A

公开(公告)日：1979-08-07

申请号：US839720

申请日：1977-10-05

Applicant: George E. Keefe

Inventor： George E. Keefe

IPC: G11C11/14 ,  G11C19/08

CPC classification number: G11C19/0875 ,  G11C19/0883

Abstract: A magnetic bubble storage system and a method for making it using only two masking steps, one of which is critical. In a preferred embodiment, the storage regions are comprised of ion implanted propagation elements which can be contiguous with one another. The functions of write, read, storage, transfer between storage elements in different shift registers, and annihilation are provided by the method in which the same mask is used to define ion implanted regions and for formation of conductor metallurgy. Permalloy bridges over ion implanted regions are used to provide transfer of information between one storage element and another. In a preferred embodiment, NiFe is used for sensing, annihilation, and transfer of information, while the storage registers are comprised of ion implanted regions defining contiguous propagation elements of generally circular geometry.

Abstract translation: 一种磁性气泡存储系统及其使用仅使用两个掩蔽步骤的方法，其中之一是至关重要的。 在一个优选实施例中，存储区域由离子注入的传播元件组成，其可以彼此连续。 通过使用相同的掩模来定义离子注入区域和形成导体冶金的方法提供了在不同移位寄存器中的存储元件之间的写入，读取，存储，传输和湮灭的功能。 离子注入区域之间的坡莫合金桥梁用于提供一个存储元件与另一个之间的信息传递。 在优选实施例中，NiFe用于感测，湮灭和传输信息，而存储寄存器由限定大致圆形几何形状的连续传播元件的离子注入区域组成。

公开(公告)号：US4162537A

公开(公告)日：1979-07-24

申请号：US914959

申请日：1978-06-12

Applicant: Andrew H. Bobeck

Inventor： Andrew H. Bobeck

IPC: G11C11/14 ,  G11C19/08

CPC classification number: G11C19/0841 ,  G11C19/0883

Abstract: A high speed magnetic bubble memory is realized with two like-apertured metallic layers each adapted for substantially uniform overall current flow. The apertures locally modify the current flow to provide localized field gradients for moving bubbles in an adjacent bubble layer. The patterns of apertures in the two layers are offset with respect to one another and the layers are pulsed in sequence in a manner to move bubbles along propagation paths defined by the patterns of apertures.

Abstract translation: {PG，1 A高速磁性气泡存储器是用两个相似孔径的金属层实现的，每个都适用于基本均匀的总电流。 孔部分地修改电流以提供用于在相邻气泡层中移动气泡的局部场梯度。 两层中的孔的图案相对于彼此偏移，并且按照以由孔的图案限定的传播路径移动气泡的顺序脉冲的层。

公开(公告)号：US4156937A

公开(公告)日：1979-05-29

申请号：US841506

申请日：1977-10-12

Applicant: G. Patrick Bonnie

Inventor： G. Patrick Bonnie

IPC: G11C19/08

CPC classification number: G11C19/0883 ,  G11C19/0816

Abstract: A noncirculating register for bubble memory systems is comprised of a propagation track, or shift register, which allows the transmission of bubbles in a serial path, a plurality of bubble idlers formed in an array parallel and adjacent to the propagation track and coupled thereto and a single current conductor arranged in such a fashion that there is a loop formed in the vicinity of each idler location, said loop extending into the propagation track which contains the normal straight line path of the conductor. By properly current pulsing the conductor loop in proper relationship to the rotating in-plane magnetic field, bubbles may be transferred in, transferred out, replicated out or annihilated in the various idler locations with respect to the contents of the propagation track. Without a current pulse, the contents of the idler locations and the propagation track have no effect on one another.

Abstract translation: 用于气泡存储器系统的非循环寄存器由传播轨道或移位寄存器组成，其允许在串行路径中传输气泡，多个平行并邻近传播轨道的阵列形成的气泡惰轮，并且耦合到其上 以这样一种方式布置的单电流导体，即在每个惰轮位置附近形成有一个环，所述环延伸到包含导体的正常直线路径的传播轨迹中。 通过适当地电流使导体环与旋转的平面内磁场适当地关联，气泡可以相对于传播轨道的内容在各个惰轮位置传送，传出，复制或湮灭。 没有电流脉冲，惰轮位置和传播轨迹的内容彼此无影响。