公开(公告)号：US20250063820A1

公开(公告)日：2025-02-20

申请号：US18938670

申请日：2024-11-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Jun KOYAMA

IPC: H01L27/12 ,  G09G3/3266 ,  G09G3/36 ,  G11C19/28

Abstract: The power consumption of a shift register or a display device including the shift register is reduced. A clock signal is supplied to a shift register by a plurality of wirings, not by one wiring. Any one of the plurality of wirings supplies a clock signal in only part of the operation period of the shift register, not during the whole operation period of the shift register. Therefore, the capacity load caused with the supply of clock signals can be reduced, leading to reduction in power consumption of the shift register.

公开(公告)号：US20250061746A1

公开(公告)日：2025-02-20

申请号：US18939631

申请日：2024-11-07

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Tatsuya OKANO ,  Teppei OGUNI ,  Kengo AKIMOTO

IPC: G06V40/20 ,  G06V10/74 ,  G06V10/762 ,  G06V10/82 ,  G06V40/16

Abstract: A data processing system that can sense fatigue or the like using a neural network is provided. First, a reference image is obtained on the basis of first to n-th images (n is an integer greater than or equal to 2). Next, the first to n-th images and the reference image are input to an input layer of a neural network, first to n-th estimated ages and a reference estimated age are output from an output layer, and first to n-th data and reference data are output from an intermediate layer. After that, first to n-th coordinates are obtained in each of which an x-coordinate is a value corresponding to a difference between the reference estimated age and the first to n-th estimated ages and a y-coordinate is a value corresponding to the degree of similarity between the reference data and the first to n-th data. Next, a query image is input to the input layer, a query estimated age is output from the output layer, query data is output from the intermediate layer, and query coordinates are obtained using the output results. Whether a person of a face included in the query image feels fatigue or the like is determined on the basis of the first to n-th coordinates and the query coordinates.

公开(公告)号：US12230696B2

公开(公告)日：2025-02-18

申请号：US18606052

申请日：2024-03-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Hideomi Suzawa ,  Shinya Sasagawa ,  Motomu Kurata ,  Masashi Tsubuku

IPC: H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  H01L27/146 ,  H01L29/786

Abstract: The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.

公开(公告)号：US20250056837A1

公开(公告)日：2025-02-13

申请号：US18928429

申请日：2024-10-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Masami JINTYOU ,  Yukinori SHIMA ,  Takashi HAMOCHI ,  Yasutaka NAKAZAWA

IPC: H01L29/786 ,  G02F1/1333 ,  G02F1/1335 ,  G02F1/1339 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/10 ,  H01L29/45 ,  H10K59/121

Abstract: A semiconductor device comprising an oxide semiconductor film, a gate electrode, a first insulating film, a source electrode, a drain electrode, and a second insulating film is provided. Each of a top surface of the gate electrode, a top surface of the source electrode, and a top surface of the drain electrode comprises a region in contact with the second insulating film. A top surface of the first insulating film comprises a region in contact with the gate electrode and a region in contact with the second insulating film and overlapping with the oxide semiconductor film in a cross-sectional view of the oxide semiconductor film. The oxide semiconductor film comprises a region in contact with the first insulating film and a region in contact with the second insulating film and adjacent to the region in contact with the first insulating film in the cross-sectional view.

公开(公告)号：US20250056786A1

公开(公告)日：2025-02-13

申请号：US18723731

申请日：2022-12-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Ryota HODO ,  Tatsuya ONUKI ,  Kiyoshi KATO

IPC: H10B12/00

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor and a capacitor; the transistor includes an oxide, a first conductor and a second conductor over the oxide, a first insulator that is placed over the first conductor and the second conductor and includes a first opening and a second opening, a second insulator in the first opening of the first insulator, and a third conductor over the second insulator; the first opening in the first insulator includes a region overlapping with the oxide; the third conductor includes a region overlapping with the oxide with the second insulator therebetween; the capacitor includes the second conductor, a third insulator in the second opening of the first insulator, and a fourth conductor over the third insulator; and the distance between the first conductor and the second conductor is smaller than the width of the first opening in a cross-sectional view of the transistor in a channel length direction.

公开(公告)号：US20250054523A1

公开(公告)日：2025-02-13

申请号：US18932891

申请日：2024-10-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takeshi AOKI ,  Yoshiyuki KUROKAWA ,  Munehiro KOZUMA ,  Takuro KANEMURA ,  Tatsunori INOUE

IPC: G11C5/10 ,  G11C11/22 ,  H01L29/66 ,  H01L29/78 ,  H10B53/30

Abstract: A semiconductor device with a small circuit area and low power consumption is provided. The semiconductor device includes first to fourth cells, a current mirror circuit, and first to fourth wirings, and the first to fourth cells each include a first transistor, a second transistor, and a capacitor. In each of the first to fourth cells, a first terminal of the first transistor is electrically connected to a first terminal of the capacitor and a gate of the second transistor. The first wiring is electrically connected to first terminals of the second transistors in the first cell and the second cell, the second wiring is electrically connected to first terminals of the second transistors in the third cell and the fourth cell, the third wiring is electrically connected to second terminals of the capacitors in the first cell and the third cell, and the fourth wiring is electrically connected to second terminals of the capacitors in the second cell and the fourth cell. The current mirror circuit is electrically connected to the first wiring and the second wiring.

公开(公告)号：US12225748B2

公开(公告)日：2025-02-11

申请号：US18788835

申请日：2024-07-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Seo ,  Tatsuyoshi Takahashi ,  Takeyoshi Watabe ,  Satomi Mitsumori

IPC: H10K50/12 ,  C07F15/00 ,  C09K11/06 ,  H10K50/11 ,  H10K50/15 ,  H10K50/16 ,  H10K59/12 ,  H10K59/38 ,  H10K59/40 ,  H10K85/30 ,  H10K85/60 ,  H10K101/00 ,  H10K101/10 ,  H10K101/30 ,  H10K101/40

Abstract: A light-emitting element with high emission efficiency. The light-emitting element includes a first organic compound, a second organic compound, and a guest material. The LUMO level of the first organic compound is lower than the LUMO level of the second organic compound. The HOMO level of the first organic compound is lower than the HOMO level of the second organic compound. The HOMO level of the guest material is higher than the HOMO level of the second organic compound. The energy difference between the LUMO level of the guest material and the HOMO level of the guest material is larger than the energy difference between the LUMO level of the first organic compound and the HOMO level of the second organic compound. The guest material has a function of converting triplet excitation energy into light emission. The first organic compound and the second organic compound form an exciplex.

公开(公告)号：US12225739B2

公开(公告)日：2025-02-11

申请号：US18626592

申请日：2024-04-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya Honda ,  Masashi Tsubuku ,  Yusuke Nonaka ,  Takashi Shimazu ,  Shunpei Yamazaki

IPC: G02F1/1337 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1343 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/24 ,  H01L29/51 ,  H01L29/66 ,  H10K59/121

Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.

公开(公告)号：US12222683B2

公开(公告)日：2025-02-11

申请号：US18205268

申请日：2023-06-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Ryota Tajima ,  Kensuke Yoshizumi

IPC: G04B37/14 ,  A44C5/00 ,  A44C5/14 ,  G04G17/06 ,  G04G19/00 ,  H01M50/202 ,  H01M50/569 ,  H02J7/00

Abstract: A device capable of being used for a long time is achieved. A power supply, a connection method of a power supply, or a connecting member, for easy attachment and detachment and non-detachment when in use, is provided. A power supply, a connection method of a power supply, or a connecting member for easy replacement is provided. A highly designed power supply is provided. Power from a battery is supplied to an electronic device through a connecting member including a pipe, a spring, and a pair of pivots. The pair of pivots are electrically insulated from each other, and electrically connected to any one of a pair of electrodes of the battery. The electronic device into which the pair of pivots are inserted includes a pair of bearings capable of receiving power.

公开(公告)号：US20250048909A1

公开(公告)日：2025-02-06

申请号：US18718878

申请日：2022-12-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yuichi YANAGISAWA ,  Daiki NAKAMURA ,  Hiromi SAWAI ,  Ryota HODO

IPC: H10K59/88 ,  H10K59/122 ,  H10K59/80

Abstract: A display apparatus with high display quality is provided. In the display apparatus, a dummy pixel portion is a region that does not contribute to display. The dummy pixel portion is positioned adjacent to the outside of a pixel portion in a plan view. The pixel portion includes a first insulating layer, a first pixel electrode and a second pixel electrode over the first insulating layer, a first layer over the first pixel electrode, a second layer over the second pixel electrode, and a common electrode over the first layer and the second layer. The dummy pixel portion includes the first insulating layer, a first conductive layer and a second conductive layer over the first insulating layer, a third layer over the first conductive layer, a fourth layer over the second conductive layer, and the common electrode over the third layer and the fourth layer. The first insulating layer includes a first groove and a second groove. The first groove includes a first region overlapping with the first pixel electrode and a second region overlapping with the second pixel electrode. The second groove includes a third region overlapping with the first conductive layer and a fourth region overlapping with the second conductive layer.