公开(公告)号：US08487294B2

公开(公告)日：2013-07-16

申请号：US13129815

申请日：2010-06-30

Applicant: Dianzhong Wen ,  Xiaohui Bai

Inventor： Dianzhong Wen ,  Xiaohui Bai

IPC: H01L45/00

CPC classification number: H01L29/66166 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2213/55 ,  G11C2213/71 ,  G11C2213/77 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16

Abstract: A nanostructure quick-switch memristor includes an upper electrode, a lower electrode and three layers of nanomembrane provided between the upper electrode and the lower electrode. The three layers of nanomembrane consist of an N-type semiconductor layer, a neutral semiconductor layer on the N-type semiconductor layer, and a P-type semiconductor layer on the neutral semiconductor layer. The nanostructure quick-switch memristor of the present invention has the quick switching speed, simple manufacturing method, and low manufacturing cost.

Abstract translation: 纳米结构快速开关忆阻器包括上电极，下电极和设置在上电极和下电极之间的三层纳米膜。 三层纳米膜由N型半导体层，N型半导体层上的中性半导体层和中性半导体层上的P型半导体层组成。 本发明的纳米结构快开式忆阻器具有开关速度快，制造方法简单，制造成本低的优点。

公开(公告)号：US20220260495A1

公开(公告)日：2022-08-18

申请号：US17543698

申请日：2021-12-06

Applicant: HEILONGJIANG UNIVERSITY

Inventor： Hongliang XU ,  Qin ZHOU ,  Li LI ,  Zishi WANG ,  Xiangshuai LI ,  Yue XING ,  Jinsheng GAO

IPC: G01N21/64 ,  G01N21/33

Abstract: The present disclosure belongs to the field of application of protein, and relates to use of a protein in predicting properties of a drug. The drug comprises pesticides, human drugs and veterinary drugs, and the protein is applied in the following steps: preparing a 0.02 M phosphate buffer solution with pH value of 7.4; dissolving and diluting a protein solution with the prepared buffer solution according to a signal value to obtain a protein diluent; mixing the prepared protein diluent with the drug to be tested in a molar ratio of 1: (1-300) to obtain a mixed solution to be tested, and predicting the drug properties by using fluorescence spectrum, synchronous fluorescence, three-dimensional fluorescence, circular dichroism spectrum, UV-Vis absorption spectrum, linear spectrum or band spectrum.

公开(公告)号：US08609459B2

公开(公告)日：2013-12-17

申请号：US13917270

申请日：2013-06-13

Applicant: Heilongjiang University

Inventor： Dianzhong Wen ,  Xiaohui Bai

IPC: H01L29/02

CPC classification number: H01L29/66166 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2213/55 ,  G11C2213/71 ,  G11C2213/77 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16

Abstract: A nanostructure quick-switch memristor includes an upper electrode, a lower electrode and three layers of nanomembrane provided between the upper electrode and the lower electrode. The three layers of nanomembrane consist of an N-type semiconductor layer, a neutral semiconductor layer on the N-type semiconductor layer, and a P-type semiconductor layer on the neutral semiconductor layer. The nanostructure quick-switch memristor of the present invention has the quick switching speed, simple manufacturing method, and low manufacturing cost.

Abstract translation: 纳米结构快速开关忆阻器包括上电极，下电极和设置在上电极和下电极之间的三层纳米膜。 三层纳米膜由N型半导体层，N型半导体层上的中性半导体层和中性半导体层上的P型半导体层组成。 本发明的纳米结构快开式忆阻器具有开关速度快，制造方法简单，制造成本低的优点。