Abstract:
The present disclosure enables high-resolution direct patterning of a material on a substrate by establishing and maintaining a separation between a shadow mask and a substrate based on the thickness of a plurality of standoffs. The standoffs function as a physical reference that, when in contact between the substrate and shadow mask determine the separation between them. Embodiments are described in which the standoffs are affixed to an element selected from the shadow mask, the substrate, the mask chuck, and the substrate chuck.
Abstract:
A method of active alignment of a shadow mask to a substrate includes a first alignment by moving the shadow mask and the substrate a first distance in a vertical direction, capturing a first alignment image, determining at least one of a first correction distance and a first rotational correction angle, and aligning the shadow mask and the substrate by moving the first correction distance and rotating the first rotational correction angle. The method further includes performing a first material deposition process on the substrate and continuously capturing a first series of alignment images during the generation of the first material deposition flow. During the generation of the first material deposition flow the first series of alignment images are analyzed to determine a second correction distance and a second rotational correction angle and determining whether second distance and/or rotational correction angle is greater than or equal to a predetermined value to cause a second alignment process to occur.
Abstract:
A linear evaporation apparatus, system and method including a conductance chamber including a linear output section configured to emit a linear source deposition flux therethrough, an evaporative vapor communication conduit including an evaporative vapor mixing chamber and a plurality of crucible-receiving apertures at distal ends from the evaporative vapor mixing chamber, wherein the evaporative vapor mixing chamber is in communication with the conductance chamber and configured to transmit the linear source deposition flux therethrough, and a plurality of crucibles, each of the plurality of crucibles corresponding to one of the plurality of crucible-receiving apertures at the distal ends from the evaporative vapor mixing chamber, each of the plurality of crucibles configured to hold a material and heat the material to a corresponding material evaporation temperature, each of the plurality of crucibles further including a vapor pressure activated lid configured to open at a predetermined material vapor pressure value generated by heating the crucibles to at least the corresponding material evaporation temperature.
Abstract:
In a method for designing and fabricating a micro-lens array, a design is finalized by varying certain features of a shadow mask, varying a distance between a source of lens-forming material and the shadow mask, and varying other parameters until the features and distances result in the formation of a micro-lens having desired shape, etc. A shadow mask in accordance with the design is then fabricated and is appropriately positioned with respect to a micro-display and a source of lens-forming material. A plume of lens-forming material is then generated under reduced pressure and which propagates toward the shadow mask, directly patterning the micro-lenses on sub-pixels of the micro-display.
Abstract:
A direct-deposition system capable of forming a high-resolution pattern of material on a substrate is disclosed. Vaporized atoms from an evaporation source pass through an aperture pattern of a shadow mask to deposit on the substrate in the desired pattern. Prior to reaching the shadow mask, the vaporized atoms pass through a collimator that operates as a spatial filter that blocks any atoms not travelling along directions that are nearly normal to the substrate surface. As a result, the vaporized atoms that pass through the shadow mask exhibit little or no lateral spread (i.e., feathering) after passing through its apertures and the material deposits on the substrate in a pattern that has very high fidelity with the aperture pattern of the shadow mask. The present invention, therefore, mitigates the need for relatively large space between regions of deposited material normally required in the prior art, thereby enabling high-resolution patterning.
Abstract:
A shadow mask that includes compensation layer operative for at least partially correcting gravity-induced sag of a shadow-mask membrane is disclosed. The compensation layer is formed on a surface of the shadow-mask membrane such that the compensation layer is characterized by a residual stress that gives rise to a first bending moment in the membrane, where the first bending moment is directed in the opposite direction to a second bending moment in the membrane that is induced by the effect of gravity.
Abstract:
An OLED apparatus is provided that includes a first electrode having a first polarity, and an electrode arrangement spaced apart from the first electrode and having a second polarity. The OLED apparatus also includes a first organic emissive layer interposed between the first electrode and the electrode arrangement, and a second electrode spaced apart from the electrode arrangement in a direction opposite the first electrode. The second electrode has the first polarity. The OLED apparatus further includes a second organic emissive layer interposed between the second electrode and the electrode arrangement, and a drive circuit for providing a first energizing signal to the first electrode and the electrode arrangement and a second energizing signal to the second electrode and the electrode arrangement. A method for manufacturing an OLED array is provided.
Abstract:
A direct-deposition system forming a high-resolution pattern of material on a substrate is disclosed. Vaporized atoms from an evaporation source pass through a pattern of through-holes in a shadow mask to deposit on the substrate in the desired pattern. The shadow mask is held in a mask chuck that enables the shadow mask and substrate to be separated by a distance that can be less than ten microns. Prior to reaching the shadow mask, vaporized atoms pass through a collimator that operates as a spatial filter that blocks any atoms not travelling along directions that are nearly normal to the substrate surface. Vaporized atoms that pass through the shadow mask exhibit little or no lateral spread after passing through through-holes and the material deposits on the substrate in a pattern that has very high fidelity with the through-hole pattern of the shadow mask.
Abstract:
Aspects of the present disclosure are directed to systems, method, and structures including a high-resolution shadow mask with tapered aperture/pixel openings that advantageously overcomes problems plaguing the prior art namely shadowing, sagging, and fragility.
Abstract:
The present disclosure enables high-resolution direct patterning of a material on a substrate by establishing and maintaining a separation between a shadow mask and a substrate based on the thickness of a plurality of standoffs. The standoffs function as a physical reference that, when in contact between the substrate and shadow mask determine the separation between them. Embodiments are described in which the standoffs are affixed to an element selected from the shadow mask, the substrate, the mask chuck, and the substrate chuck.