METHOD FOR REPARING DEFECTIVE LINE OF ORGANIC LIGHT EMITTING DISPLAY DEVICE
    3.
    发明申请
    METHOD FOR REPARING DEFECTIVE LINE OF ORGANIC LIGHT EMITTING DISPLAY DEVICE 有权
    用于重新排列有机发光显示装置的有缺陷的方法

    公开(公告)号:US20100015876A1

    公开(公告)日:2010-01-21

    申请号:US12488019

    申请日:2009-06-19

    申请人: Jin-Gyu Kang Keun Kim

    发明人: Jin-Gyu Kang Keun Kim

    IPC分类号: H01J9/00

    摘要: A method of repairing a defective line of an organic light emitting display device which repairs a short defect occurring between a bidirectional line and an adjacent line includes separating a portion where a short defect occurs from the bidirectional line by cutting a portion of the bidirectional line; and applying a signal toward an end of the cut portion from both sides of the bidirectional line.

    摘要翻译: 修复修复在双向线路和相邻线路之间出现的短路缺陷的有机发光显示装置的有缺陷的线路的方法包括:通过切割双向线路的一部分来分离发生短路缺陷的部分与双向线路; 以及从双向线路的两侧向切割部分的端部施加信号。

    Method for repairing defective line of organic light emitting display device
    4.
    发明授权
    Method for repairing defective line of organic light emitting display device 有权
    修复有机发光显示装置有缺陷的方法

    公开(公告)号:US08002600B2

    公开(公告)日:2011-08-23

    申请号:US12488019

    申请日:2009-06-19

    申请人: Jin-Gyu Kang Keun Kim

    发明人: Jin-Gyu Kang Keun Kim

    IPC分类号: H01J9/50

    摘要: A method of repairing a defective line of an organic light emitting display device which repairs a short defect occurring between a bidirectional line and an adjacent line includes separating a portion where a short defect occurs from the bidirectional line by cutting a portion of the bidirectional line; and applying a signal toward an end of the cut portion from both sides of the bidirectional line.

    摘要翻译: 修复修复在双向线路和相邻线路之间出现的短路缺陷的有机发光显示装置的有缺陷的线路的方法包括:通过切割双向线路的一部分来分离发生短路缺陷的部分与双向线路; 以及从双向线路的两侧向切割部分的端部施加信号。

    Method of manufacturing an array substrate for LCD device having double-layered metal structure
    6.
    发明授权
    Method of manufacturing an array substrate for LCD device having double-layered metal structure 有权
    制造具有双层金属结构的LCD装置阵列基板的方法

    公开(公告)号:US07956949B2

    公开(公告)日:2011-06-07

    申请号:US12761174

    申请日:2010-04-15

    IPC分类号: G02F1/136

    摘要: An array substrate in a liquid crystal display device includes a gate electrode, a gate line and a gate pad on a substrate, wherein the gate electrode, the gate line and the gate pad have a double-layered structure consisting of a first metal layer and a first barrier metal layer in series from the substrate, and wherein the first metal is one of aluminum and aluminum alloy; a gate insulation laver; an active layer and an ohmic contact layer; a data line, source and drain electrodes, and a data pad each having a double-layered structure consisting of a second barrier metal layer and a second metal layer of copper; a passivation layer; and a pixel electrode, a gate pad terminal and a data pad terminal on the passivation layer formed of a transparent conductive material.

    摘要翻译: 液晶显示装置中的阵列基板包括在基板上的栅电极,栅极线和栅极焊盘,其中栅电极,栅极线和栅极焊盘具有由第一金属层和第二金属层构成的双层结构, 从所述基板串联的第一阻挡金属层,其中所述第一金属是铝和铝合金之一; 门绝缘紫菜; 有源层和欧姆接触层; 数据线,源极和漏极以及数据焊盘,每个数据焊盘具有由第二阻挡金属层和第二金属层构成的双层结构; 钝化层; 以及由透明导电材料形成的钝化层上的像素电极,栅极焊盘端子和数据焊盘端子。

    METHOD OF MANUFACTURING AN ARRAY SUBSTRATE FOR LCD DEVICE HAVING DOUBLE-LAYERED METAL STRUCTURE
    7.
    发明申请
    METHOD OF MANUFACTURING AN ARRAY SUBSTRATE FOR LCD DEVICE HAVING DOUBLE-LAYERED METAL STRUCTURE 有权
    具有双层金属结构的液晶显示装置制造阵列基板的方法

    公开(公告)号:US20100203687A1

    公开(公告)日:2010-08-12

    申请号:US12761174

    申请日:2010-04-15

    IPC分类号: H01L21/86

    摘要: The present invention is an array substrate for use in a liquid crystal display device, which includes a gate electrode, a gate line and a gate pad on a substrate, wherein the gate electrode, the gate line and the gate pad have a double-layered structure consisting of a first metal layer and a first barrier metal layer in series from the substrate, and wherein the first metal is one of aluminum and aluminum alloy; a gate insulation layer on the substrate covering the gate electrode, gate line and gate pad; an active layer and an ohmic contact layer sequentially formed on the gate insulation layer and over the gate electrode; a data line on the gate insulation layer perpendicularly crossing the gate line, source and drain electrodes contacting the ohmic contact layer, and a data pad on the gate insulation layer, wherein the data line, the source and drain electrode and the data pad have a double-layered structure consisting of a second barrier metal layer and a second metal layer of copper; a passivation layer formed on the gate insulation layer to cover the data line, source and drain electrodes, and data pad, wherein the passivation layer has a drain contact hole exposing a portion of the drain electrode, a gate pad contact hole exposing a portion of the gate pad, and a data pad contact hole exposing a portion of the data pad; and a pixel electrode, a gate pad terminal and a data pad terminal on the passivation layer, all of which are formed of a transparent conductive material on the passivation layer.

    摘要翻译: 本发明是一种用于液晶显示装置的阵列基板,其包括在基板上的栅电极,栅极线和栅极焊盘,其中栅电极,栅极线和栅极焊盘具有双层 结构由第一金属层和与基板串联的第一阻挡金属层组成,其中第一金属是铝和铝合金之一; 覆盖栅电极,栅极线和栅极焊盘的基板上的栅极绝缘层; 依次形成在栅极绝缘层上和栅电极上的有源层和欧姆接触层; 垂直于栅极线的栅极绝缘层上的数据线,与欧姆接触层接触的源极和漏极以及栅极绝缘层上的数据焊盘,其中,数据线,源极和漏极以及数据焊盘具有 由第二阻挡金属层和铜的第二金属层组成的双层结构; 形成在所述栅极绝缘层上以覆盖所述数据线,源极和漏极以及数据焊盘的钝化层,其中所述钝化层具有暴露所述漏电极的一部分的漏极接触孔, 栅极焊盘和暴露数据焊盘的一部分的数据焊盘接触孔; 以及钝化层上的像素电极,栅极焊盘端子和数据焊盘端子,所有这些都由钝化层上的透明导电材料形成。

    Array substrate for LCD device having double-layered metal structure and manufacturing method thereof
    8.
    发明申请
    Array substrate for LCD device having double-layered metal structure and manufacturing method thereof 有权
    具有双层金属结构的液晶显示装置用阵列基板及其制造方法

    公开(公告)号:US20080182352A1

    公开(公告)日:2008-07-31

    申请号:US12078048

    申请日:2008-03-26

    IPC分类号: H01L21/70

    摘要: The present invention is an array substrate for use in a liquid crystal display device, which includes a gate electrode, a gate line and a gate pad on a substrate, wherein the gate electrode, the gate line and the gate pad have a double-layered structure consisting of a first metal layer and a first barrier metal layer in series from the substrate, and wherein the first metal is one of aluminum and aluminum alloy; a gate insulation layer on the substrate covering the gate electrode, gate line and gate pad; an active layer and an ohmic contact layer sequentially formed on the gate insulation layer and over the gate electrode; a data line on the gate insulation layer perpendicularly crossing the gate line, source and drain electrodes contacting the ohmic contact layer, and a data pad on the gate insulation layer, wherein the data line, the source and drain electrode and the data pad have a double-layered structure consisting of a second barrier metal layer and a second metal layer of copper; a passivation layer formed on the gate insulation layer to cover the data line, source and drain electrodes, and data pad, wherein the passivation layer has a drain contact hole exposing a portion of the drain electrode, a gate pad contact hole exposing a portion of the gate pad, and a data pad contact hole exposing a portion of the data pad; and a pixel electrode, a gate pad terminal and a data pad terminal on the passivation layer, all of which are formed of a transparent conductive material on the passivation layer.

    摘要翻译: 本发明是一种用于液晶显示装置的阵列基板,其包括在基板上的栅电极,栅极线和栅极焊盘,其中栅电极,栅极线和栅极焊盘具有双层 结构由第一金属层和与基板串联的第一阻挡金属层组成,其中第一金属是铝和铝合金之一; 覆盖栅电极,栅极线和栅极焊盘的基板上的栅极绝缘层; 依次形成在栅极绝缘层上和栅电极上的有源层和欧姆接触层; 垂直于栅极线的栅极绝缘层上的数据线,与欧姆接触层接触的源极和漏极以及栅极绝缘层上的数据焊盘,其中数据线,源极和漏极以及数据焊盘具有 由第二阻挡金属层和铜的第二金属层组成的双层结构; 形成在所述栅极绝缘层上以覆盖所述数据线,源极和漏极以及数据焊盘的钝化层,其中所述钝化层具有暴露所述漏电极的一部分的漏极接触孔, 栅极焊盘和暴露数据焊盘的一部分的数据焊盘接触孔; 以及钝化层上的像素电极,栅极焊盘端子和数据焊盘端子,所有这些都由钝化层上的透明导电材料形成。

    Array substrate for liquid crystal display device and fabricating method thereof
    10.
    发明申请
    Array substrate for liquid crystal display device and fabricating method thereof 有权
    液晶显示装置用阵列基板及其制造方法

    公开(公告)号:US20050122443A1

    公开(公告)日:2005-06-09

    申请号:US10964922

    申请日:2004-10-15

    IPC分类号: G02F1/136 G02F1/1362

    摘要: A semiconductor device includes a substrate having source and drain regions, a gate insulating layer on the substrate, a gate electrode on the gate insulating layer, an interlayer on the gate electrode, a source electrode connected to the source region, and a drain electrode connected to the drain region, wherein at least one of the gate electrode, the source electrode and the drain electrode includes a first metal layer of molybdenum (Mo)-titanium (Ti) alloy, a second metal layer of one of metallic metals including copper (Cu), aluminum (Al), silver (Ag) and gold (Au) on the first metal layer.

    摘要翻译: 半导体器件包括具有源极和漏极区域的衬底,衬底上的栅极绝缘层,栅极绝缘层上的栅极电极,栅极电极上的中间层,连接到源极区域的源极和连接到漏极电极的漏电极 其中所述栅电极,所述源电极和所述漏电极中的至少一个包括钼(Mo) - 钛(Ti)合金的第一金属层,包括铜的金属金属之一的第二金属层 Cu),铝(Al),银(Ag)和金(Au)。