公开(公告)号：US08330168B2

公开(公告)日：2012-12-11

申请号：US13143874

申请日：2009-12-24

申请人： Yutaka Ohta ,  Yoshikazu Ooshika

发明人： Yutaka Ohta ,  Yoshikazu Ooshika

IPC分类号： H01L29/15

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/02 ,  H01L33/14 ,  H01L33/40

摘要： An object of the present invention is to provide a nitride semiconductor light-emitting device in which contact resistance generated between an n-contact layer and an n-side electrode is effectively reduced while maintaining satisfactory external quantum efficiency, and a method of efficiently producing the nitride semiconductor light-emitting device. Specifically, the present invention characteristically provides a nitride semiconductor light-emitting device having a semiconductor laminated body including an n-type laminate, a light-emitting layer and a p-type laminate, and an n-side electrode and a p-side electrode, characterized in that: the n-type laminate includes an n-contact layer made of an AlxGa1-xN material (0.7≦x≦1.0) and an n-clad layer provided on the n-contact layer; and an interlayer made of an AlyGa1-yN material (0≦y≦0.5) is provided on a partially exposed portion, on the light-emitting layer side, of the n-contact layer.

摘要翻译： 本发明的目的是提供一种氮化物半导体发光器件，其中在保持令人满意的外部量子效率的同时，在n接触层和n侧电极之间产生的接触电阻被有效地降低，并且有效地产生 氮化物半导体发光器件。 具体地说，本发明特征在于提供一种具有半导体层叠体的氮化物半导体发光元件，该半导体层叠体包括n型层叠体，发光层和p型层叠体，以及n侧电极和p侧电极 其特征在于，所述n型层压体包括由Al x Ga 1-x N材料（0.7＆amp; N e; x＆nlE; 1.0）构成的n接触层和设置在所述n接触层上的n包层; 并且在n接触层的发光层侧的部分曝光部分上设置由Al y Ga 1-y N材料制成的中间层（0＆amp; nlE; y＆nlE; 0.5）。

公开(公告)号：US20090250684A1

公开(公告)日：2009-10-08

申请号：US12398720

申请日：2009-03-05

申请人： Yutaka Ohta ,  Yoshikazu Ooshika

发明人： Yutaka Ohta ,  Yoshikazu Ooshika

IPC分类号： H01L33/00 ,  H01L21/20 ,  H01L29/66

CPC分类号： H01L33/46 ,  H01L33/0079 ,  H01L33/38

摘要： A semiconductor element is disclosed having a layered body of a first conductivity type, a light emitting layer, a layered body of a second conductivity type, a constriction layer having a constriction hole, and a first electrode having a lighting hole, a second electrode positioned such that charge traveling between the first and second electrodes passes through the light emitting layer. The constriction hole area is larger than the lighting hole area, and the lighting hole and the constriction hole expose a part of the layered body of the second conductivity type. A mirror is positioned such that the mirror receives light emitted from the light emitting layer that passes through the layered body of the first conductivity type, and the mirror is constructed to have a high reflection ratio for light having peak wavelengths between 200 nm to 350 nm.

摘要翻译： 公开了一种半导体元件，其具有第一导电类型的层叠体，发光层，第二导电类型的层叠体，具有收缩孔的收缩层，以及具有照明孔的第一电极，位于 使得在第一和第二电极之间行进的电荷通过发光层。 收缩孔面积大于照明孔面积，照明孔和收缩孔露出第二导电型层叠体的一部分。 反射镜被定位成使得反射镜接收从发光层发射的穿过第一导电类型的层叠体的光，并且反射镜被构造成对于具有200nm至350nm的峰值波长的光具有高反射率 。

公开(公告)号：US20110266553A1

公开(公告)日：2011-11-03

申请号：US13143874

申请日：2009-12-24

申请人： Yutaka Ohta ,  Yoshikazu Ooshika

发明人： Yutaka Ohta ,  Yoshikazu Ooshika

IPC分类号： H01L33/02

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/02 ,  H01L33/14 ,  H01L33/40

摘要： An object of the present invention is to provide a nitride semiconductor light-emitting device in which contact resistance generated between an n-contact layer and an n-side electrode is effectively reduced while maintaining satisfactory external quantum efficiency, and a method of efficiently producing the nitride semiconductor light-emitting device. Specifically, the present invention characteristically provides a nitride semiconductor light-emitting device having a semiconductor laminated body including an n-type laminate, a light-emitting layer and a p-type laminate, and an n-side electrode and a p-side electrode, characterized in that: the n-type laminate includes an n-contact layer made of an AlxGa1-xN material (0.7≦x≦1.0) and an n-clad layer provided on the n-contact layer; and an interlayer made of an AlyGa1-yN material (0≦y≦0.5) is provided on a partially exposed portion, on the light-emitting layer side, of the n-contact layer.

摘要翻译： 本发明的目的是提供一种氮化物半导体发光器件，其中在保持令人满意的外部量子效率的同时，在n接触层和n侧电极之间产生的接触电阻被有效地降低，并且有效地产生 氮化物半导体发光器件。 具体地说，本发明特征在于提供一种具有半导体层叠体的氮化物半导体发光元件，该半导体层叠体包括n型层叠体，发光层和p型层叠体，以及n侧电极和p侧电极 其特征在于，所述n型层压体包括由Al x Ga 1-x N材料（0.7＆amp; N e; x＆nlE; 1.0）构成的n接触层和设置在所述n接触层上的n包层; 并且在n接触层的发光层侧的部分曝光部分上设置由Al y Ga 1-y N材料制成的中间层（0＆amp; nlE; y＆nlE; 0.5）。

公开(公告)号：US20120175589A1

公开(公告)日：2012-07-12

申请号：US13391976

申请日：2010-08-23

申请人： Yoshikazu Ooshika ,  Tetsuya Matsuura

发明人： Yoshikazu Ooshika ,  Tetsuya Matsuura

IPC分类号： H01L33/06 ,  H01L21/20 ,  H01L33/32 ,  H01L29/15

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/04 ,  H01L33/12

摘要： A nitride semiconductor device is provided, in which a superlattice strain buffer layer using AlGaN layers having a low Al content or GaN layers is formed with good flatness, and a nitride semiconductor layer with good flatness and crystallinity is formed on the superlattice strain buffer layer. A nitride semiconductor device includes a substrate; an AlN strain buffer layer made of AlN formed on the substrate; a superlattice strain buffer layer formed on the AlN strain buffer layer; and a nitride semiconductor layer formed on the superlattice strain buffer layer, and is characterized in that the superlattice strain buffer layer has a superlattice structure formed by alternately stacking first layers made of AlxGa1−xN (0≦x≦0.25), which further contain p-type impurity, and second layers made of AlN.

摘要翻译： 提供一种氮化物半导体器件，其中使用具有低Al含量或GaN层的AlGaN层的超晶格应变缓冲层形成具有良好的平坦度，并且在超晶格应变缓冲层上形成具有良好平坦度和结晶度的氮化物半导体层。 氮化物半导体器件包括衬底; 在基板上形成由AlN制成的AlN应变缓冲层; 形成在AlN应变缓冲层上的超晶格应变缓冲层; 以及形成在超晶格应变缓冲层上的氮化物半导体层，其特征在于，超晶格应变缓冲层具有通过交替地堆叠由Al x Ga 1-x N（0＆amp; n 1; x＆nl E; 0.25）构成的第一层而形成的超晶格结构，其还包含p 型杂质和由AlN制成的第二层。

公开(公告)号：US08680509B2

公开(公告)日：2014-03-25

申请号：US13391976

申请日：2010-08-23

申请人： Yoshikazu Ooshika ,  Tetsuya Matsuura

发明人： Yoshikazu Ooshika ,  Tetsuya Matsuura

IPC分类号： H01L33/06 ,  H01L29/15 ,  H01L21/20 ,  H01L33/32

CPC分类号： H01L33/32 ,  H01L33/007 ,  H01L33/04 ,  H01L33/12

摘要： A nitride semiconductor device is provided, in which a superlattice strain buffer layer using AlGaN layers having a low Al content or GaN layers is formed with good flatness, and a nitride semiconductor layer with good flatness and crystallinity is formed on the superlattice strain buffer layer. A nitride semiconductor device includes a substrate; an AlN strain buffer layer made of AlN formed on the substrate; a superlattice strain buffer layer formed on the AlN strain buffer layer; and a nitride semiconductor layer formed on the superlattice strain buffer layer, and is characterized in that the superlattice strain buffer layer has a superlattice structure formed by alternately stacking first layers made of AlxGa1-xN (0≦x≦0.25), which further contain p-type impurity, and second layers made of AlN.

摘要翻译： 提供一种氮化物半导体器件，其中使用具有低Al含量或GaN层的AlGaN层的超晶格应变缓冲层形成具有良好的平坦度，并且在超晶格应变缓冲层上形成具有良好平坦度和结晶度的氮化物半导体层。 氮化物半导体器件包括衬底; 在基板上形成由AlN制成的AlN应变缓冲层; 形成在AlN应变缓冲层上的超晶格应变缓冲层; 以及形成在超晶格应变缓冲层上的氮化物半导体层，其特征在于，超晶格应变缓冲层具有通过交替地堆叠由Al x Ga 1-x N（0＆amp; n 1; x＆nl E; 0.25）构成的第一层而形成的超晶格结构，其还包含p 型杂质和由AlN制成的第二层。

公开(公告)号：US08765222B2

公开(公告)日：2014-07-01

申请号：US13512747

申请日：2010-12-10

申请人： Yoshikazu Ooshika ,  Tetsuya Matsuura

发明人： Yoshikazu Ooshika ,  Tetsuya Matsuura

IPC分类号： C23C16/34

CPC分类号： H01L33/325 ,  C23C16/303 ,  C23C16/45523 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007

摘要： The method according to the present invention includes a first step of supplying the Group V source gas at a flow rate B1 (0

摘要翻译： 根据本发明的方法包括以流量B1（0

公开(公告)号：US20120326209A1

公开(公告)日：2012-12-27

申请号：US13582235

申请日：2011-03-01

申请人： Yoshikazu Ooshika ,  Tetsuya Matsuura

发明人： Yoshikazu Ooshika ,  Tetsuya Matsuura

IPC分类号： H01L29/267 ,  H01L21/20

CPC分类号： H01L33/12 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L33/007 ,  H01L33/04 ,  H01L33/32 ,  H01S5/32341 ,  H01S2301/173

摘要： To provide a semiconductor device including a functional laminate having flatness and crystallinity improved by effectively passing on the crystallinity and flatness improved in a buffer to the functional laminate, and to provide a method of producing the semiconductor device; in the semiconductor device including the buffer and the functional laminate having a plurality of nitride semiconductor layers, the functional laminate includes a first n-type or i-type AlxGa1-xN layer (0≦x

摘要翻译： 提供一种半导体器件，其包括通过有效地使提高到功能性层叠体的缓冲液中的结晶度和平坦度得到改善的平坦度和结晶度，并提供半导体器件的制造方法; 在包括缓冲器的半导体器件和具有多个氮化物半导体层的功能层叠体中，功能层压体包括在缓冲侧上的第一n型或i型Al x Ga 1-x N层（0＆amp; nlE; x <1） 包含p型杂质的AlzGa1-zN调节层在第一Al x Ga 1-x N层（x-0.05和nlE; z和nlE; x + 0.05,0＆nlE; z <1）之间具有大致相等的Al组成， 功能层压板。

公开(公告)号：US20120248387A1

公开(公告)日：2012-10-04

申请号：US13512747

申请日：2010-12-10

申请人： Yoshikazu Ooshika ,  Tetsuya Matsuura

发明人： Yoshikazu Ooshika ,  Tetsuya Matsuura

IPC分类号： H01B1/06

CPC分类号： H01L33/325 ,  C23C16/303 ,  C23C16/45523 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/007

摘要： The method according to the present invention includes a first step of supplying the Group V source gas at a flow rate B1 (0

摘要翻译： 根据本发明的方法包括以流量B1（0