发明授权
- 专利标题： Nitride semiconductor light-emitting element and method of manufacturing the same
- 专利标题（中）： 氮化物半导体发光元件及其制造方法
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申请号： US13143874申请日： 2009-12-24
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公开(公告)号： US08330168B2公开(公告)日： 2012-12-11
- 发明人: Yutaka Ohta , Yoshikazu Ooshika
- 申请人： Yutaka Ohta , Yoshikazu Ooshika
- 申请人地址： JP Tokyo
- 专利权人： Dowa Electronics Materials Co., Ltd.
- 当前专利权人： Dowa Electronics Materials Co., Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Oliff & Berridge, PLC
- 优先权： JP2009-003933 20090109
- 国际申请： PCT/JP2009/007214 WO 20091224
- 国际公布： WO2010/079567 WO 20100715
- 主分类号： H01L29/15
- IPC分类号： H01L29/15
摘要：
An object of the present invention is to provide a nitride semiconductor light-emitting device in which contact resistance generated between an n-contact layer and an n-side electrode is effectively reduced while maintaining satisfactory external quantum efficiency, and a method of efficiently producing the nitride semiconductor light-emitting device. Specifically, the present invention characteristically provides a nitride semiconductor light-emitting device having a semiconductor laminated body including an n-type laminate, a light-emitting layer and a p-type laminate, and an n-side electrode and a p-side electrode, characterized in that: the n-type laminate includes an n-contact layer made of an AlxGa1-xN material (0.7≦x≦1.0) and an n-clad layer provided on the n-contact layer; and an interlayer made of an AlyGa1-yN material (0≦y≦0.5) is provided on a partially exposed portion, on the light-emitting layer side, of the n-contact layer.
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