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    Chemical rinse composition
    2.
    发明申请
    Chemical rinse composition 审中-公开
    化学冲洗组成

    公开(公告)号：US20060177761A1

    公开(公告)日：2006-08-10

    申请号：US11402344

    申请日：2006-04-11

    申请人： Yung-Bae Chai ,  Si-Myung Choi ,  Jae-Sung Ro ,  Jung-Sun Choi

    发明人： Yung-Bae Chai ,  Si-Myung Choi ,  Jae-Sung Ro ,  Jung-Sun Choi

    IPC分类号： G03C11/12

    CPC分类号： G03F7/425 ,  G03F7/168

    摘要： The present invention relates to a thinner composition for removing resist used in TFT-LCD manufacturing processes, and more particularly to a thinner composition for removing resist that comprises: a) 0.1 to 5 wt % of an inorganic alkali compound; b) 0.1 to 5 wt % ofan organic amine; c) 0.1 to 30 wt % of an organic solvent; d) 0.01 to 5 wt % of a surfactant comprising an ionic surfactant and a non-ionic surfaciant in the weight ration of 1:5 to 1:25; and e) 60 to 99 wt % of water. The thinner composition for removing resist of the present invention has good efficiency of removing unwanted resist film constituents formed on the edge of the resist film or at the back of the substrate in TFR-LCD device and semiconductor device manufacturing processes. Also, it does not have the problem of equipment corrosion.

    摘要翻译： 本发明涉及一种用于去除TFT-LCD制造工艺中使用的抗蚀剂的较薄组合物，更具体地涉及一种用于除去抗蚀剂的较薄组合物，其包含：a）0.1至5重量％的无机碱化合物; b）0.1〜5重量％的有机胺; c）0.1〜30重量％的有机溶剂; d）0.01至5重量％的包含离子表面活性剂和非离子表面活性剂的表面活性剂，其重量比为1:5至1:25; 和e）60至99重量％的水。 用于除去本发明的抗蚀剂的较薄组合物具有在TFR-LCD器件和半导体器件制造工艺中除去在抗蚀剂膜的边缘或衬底背面形成的不需要的抗蚀剂膜成分的良好效率。 此外，它没有设备腐蚀的问题。

    Chemical rinse composition
    3.
    发明授权
    Chemical rinse composition 有权
    化学冲洗组成

    公开(公告)号：US07063930B2

    公开(公告)日：2006-06-20

    申请号：US10495056

    申请日：2002-11-13

    申请人： Yung-Bae Chai ,  Si-Myung Choi ,  Jae-Sung Ro ,  Jung-Sun Choi

    发明人： Yung-Bae Chai ,  Si-Myung Choi ,  Jae-Sung Ro ,  Jung-Sun Choi

    IPC分类号： G03F7/42

    CPC分类号： C11D3/044 ,  C11D1/146 ,  C11D1/72 ,  C11D1/83 ,  C11D3/08 ,  C11D3/10 ,  C11D3/2068 ,  C11D3/28 ,  C11D3/30 ,  C11D11/0047 ,  G03F7/168 ,  G03F7/322

    摘要： The present invention relates to a thinner composition for removing resist used in TFT-LCD manufacturing processes, and more particularly to a thinner composition for removing resist that comprises: a) 0.1 to 5 wt % of an inorganic alkali compound; b) 0.1 to 5 wt % of an organic amine; c) 0.1 to 30 wt % of an organic solvent; d) 0.01 to 5 wt % of a surfactant comprising an ionic surfactant and a non-ionic surfactant in the weight ration of 1:5 to 1:25; and e) 60 to 99 wt % of water. The thinner composition for removing resist of the present invention has good efficiency of removing unwanted resist film constituents formed on the edge of the resist film or at the back of the substrate in TFT-LCD device and semiconductor device manufacturing processes. Also, it does not have the problem of equipment corrosion.

    摘要翻译： 本发明涉及一种用于除去TFT-LCD制造工艺中使用的抗蚀剂的较薄组合物，更具体地涉及一种用于除去抗蚀剂的较薄组合物，其包含：a）0.1至5重量％的无机碱化合物; b）0.1〜5重量％的有机胺; c）0.1〜30重量％的有机溶剂; d）0.01至5重量％的包含离子表面活性剂和非离子表面活性剂的表面活性剂的重量比为1:5至1:25; 和e）60至99重量％的水。 用于除去本发明的抗蚀剂的组合物较薄，在TFT-LCD器件和半导体器件制造工艺中，除去形成在抗蚀剂膜的边缘或衬底背面的不需要的抗蚀剂膜成分具有良好的效率。 此外，它没有设备腐蚀的问题。