公开(公告)号：US20120014178A1

公开(公告)日：2012-01-19

申请号：US13179206

申请日：2011-07-08

申请人： Yuji NAGASHIMA ,  Bunsho Kuramori ,  Hiroyuki Tanikawa

发明人： Yuji NAGASHIMA ,  Bunsho Kuramori ,  Hiroyuki Tanikawa

IPC分类号： G11C11/4195 ,  G11C11/4197

CPC分类号： G11C8/06 ,  G11C16/0475 ,  G11C16/0491 ,  G11C16/10 ,  G11C17/146 ,  G11C29/883

摘要： A nonvolatile semiconductor memory device and a method of reusing the same that allow a good use of the semiconductor device without degrading characteristics even when reused. The semiconductor memory device comprises information holding means for holding information that indicates an operation mode of said memory cell array, a decoder for generating, to said memory cell array, a selection signal to designate at least a read address of said memory cell array in accordance with an address signal that comprises plural bits; and mode setting means for fixing a logical value of at least one bit of said plural bits of said address signal in accordance with the information held by said information holding means, and supplying said address signal, on which fixing of the logical value is effected, to said decoder.

摘要翻译： 一种非易失性半导体存储器件及其再利用方法，即使在再利用时也能够良好地利用半导体器件而不劣化特性。 半导体存储器件包括用于保存指示所述存储单元阵列的操作模式的信息的信息保持装置，用于向所述存储单元阵列生成至少指定所述存储单元阵列的读地址的选择信号的解码器 具有包括多个位的地址信号; 以及模式设定装置，用于根据由所述信息保持装置保存的信息来固定所述地址信号的所述多个比特的至少一个比特的逻辑值，并且提供实现该逻辑值固定的所述地址信号， 到所述解码器。