公开(公告)号：US20130244342A1

公开(公告)日：2013-09-19

申请号：US13419507

申请日：2012-03-14

Applicant: Yu-Jen WANG ,  Yuan-Tung CHIN

Inventor： Yu-Jen WANG ,  Yuan-Tung CHIN

IPC: H01L21/8246

CPC classification number: H01L43/12 ,  H01L27/222

Abstract: A magnetic tunnel junction (MTJ) structure is provided over a device wherein the MTJ comprises a tunnel barrier layer between a free layer and a pinned layer; and a top and bottom electrode inside the MTJ structure. A hard mask layer is formed on the top electrode. The hard mask layer, top electrode, free layer, tunnel barrier layer, and pinned layer are patterned to define the magnetic tunnel junction (MTJ) structures. A first dielectric layer is deposited over the MTJ structures and planarized to expose the top electrode. Thereafter, the top electrode and free layer are patterned. A second dielectric layer is deposited over the MTJ structures and planarized to expose the top electrode. A third dielectric layer is deposited over the MTJ structures and a metal line contact is formed through the third dielectric layer to the top electrode to complete fabrication of the magnetic device.

Abstract translation: 在一个器件上提供一个磁性隧道结（MTJ）结构，其中MTJ包括在自由层和钉扎层之间的隧道势垒层; 以及MTJ结构内的顶部和底部电极。 在顶部电极上形成硬掩模层。 将硬掩模层，顶电极，自由层，隧道势垒层和钉扎层图案化以限定磁隧道结（MTJ）结构。 第一电介质层沉积在MTJ结构上并且被平坦化以暴露顶部电极。 此后，对顶部电极和自由层进行图案化。 第二电介质层沉积在MTJ结构上并且被平坦化以暴露顶部电极。 在MTJ结构上沉积第三电介质层，并且通过第三电介质层形成金属线接触到顶部电极以完成磁性器件的制造。