公开(公告)号：US07091934B2

公开(公告)日：2006-08-15

申请号：US10628739

申请日：2003-07-28

申请人： Woo-Jin Kim ,  Yoon-Phil Eo ,  Young-Chan Lee

发明人： Woo-Jin Kim ,  Yoon-Phil Eo ,  Young-Chan Lee

IPC分类号： G09G3/28

CPC分类号： G09G3/2803 ,  G09G3/2077 ,  G09G3/293 ,  G09G2310/0213 ,  G09G2320/0271 ,  G09G2330/021 ,  G09G2360/16

摘要： A method and apparatus for controlling address power of a plasma display panel and a plasma display panel device having that apparatus, wherein the plasma display panel includes pluralities of address electrodes, scan electrodes, and sustain electrodes, the scan electrodes and sustain electrodes forming pairs and being alternately disposed. After determining an attenuation coefficient that corresponds to a sum of pixel differences between lines throughout an input video signal, output video data is modified by multiplying the attenuation coefficient to the input video data. According to such a power control of address data, power consumption is reduced since the number of times of switching address data is reduced.

摘要翻译： 一种用于控制等离子体显示面板的地址功率的方法和装置和具有该装置的等离子体显示面板装置，其中等离子体显示面板包括多个寻址电极，扫描电极和维持电极，扫描电极和维持电极形成对， 交替布置。 在确定对应于整个输入视频信号中的行之间的像素差之和的衰减系数之后，通过将衰减系数与输入视频数据相乘来修改输出视频数据。 根据地址数据的这种功率控制，由于切换地址数据的次数减少，所以功耗降低。

公开(公告)号：US08188542B2

公开(公告)日：2012-05-29

申请号：US12024319

申请日：2008-02-01

申请人： Seung-Han Yoo ,  Dae-Lim Kang ,  Young-Chan Lee

发明人： Seung-Han Yoo ,  Dae-Lim Kang ,  Young-Chan Lee

IPC分类号： H01L29/66

CPC分类号： H01L29/1033 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/66659 ,  H01L29/7833 ,  H01L29/7834 ,  H01L29/7835

摘要： A field effect transistor includes a first substrate region having a channel region and a second substrate region where a heavily doped region is formed. The channel region includes a first portion having a first width and a second portion having a second width larger than the first width. Related fabrication methods are also described.

摘要翻译： 场效应晶体管包括具有沟道区的第一衬底区域和形成重掺杂区的第二衬底区。 沟道区域包括具有第一宽度的第一部分和具有大于第一宽度的第二宽度的第二部分。 还描述了相关的制造方法。

公开(公告)号：US20080203497A1

公开(公告)日：2008-08-28

申请号：US12032233

申请日：2008-02-15

申请人： Young-Chan Lee ,  Seung-Han Yoo ,  Dae-Lim Kang

发明人： Young-Chan Lee ,  Seung-Han Yoo ,  Dae-Lim Kang

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/0847 ,  H01L29/0692 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7835

摘要： A semiconductor device may include an active region of a semiconductor substrate and first and second impurity regions in the active region. The active region may have a first conductivity type, the first and second impurity regions may have a second conductivity type opposite the first conductivity type, and the first and second impurity regions are spaced apart to define a channel region therebetween. A first source/drain region may be provided in the first impurity region, a second source/drain region may be provide in the second impurity region, the first and second source/drain regions may have the second conductivity type, and impurity concentrations of the first and second source/drain regions may be greater than impurity concentrations of the first and second impurity regions. Moreover, the first and second source/drain regions may have a same width in a direction perpendicular with respect to a direction between the first and second source/drain regions, and a distance between the first source/drain region and the channel region may be less than a distance between the second source/drain region and the channel region. In addition, a control gate may be provided on the channel region. Related methods are also discussed.

摘要翻译： 半导体器件可以包括半导体衬底的有源区和有源区中的第一和第二杂质区。 有源区可以具有第一导电类型，第一和第二杂质区可以具有与第一导电类型相反的第二导电类型，并且第一和第二杂质区间隔开以限定它们之间的沟道区。 第一源极/漏极区域可以设置在第一杂质区域中，第二源极/漏极区域可以在第二杂质区域中提供，第一和第二源极/漏极区域可以具有第二导电类型，并且第 第一和第二源/漏区可以大于第一和第二杂质区的杂质浓度。 此外，第一和第二源极/漏极区域可以在垂直于第一和第二源极/漏极区域之间的方向上具有相同的宽度，并且第一源极/漏极区域和沟道区域之间的距离可以是 小于第二源极/漏极区域和沟道区域之间的距离。 此外，可以在通道区域上设置控制栅极。 还讨论了相关方法。

公开(公告)号：US20080185666A1

公开(公告)日：2008-08-07

申请号：US12024319

申请日：2008-02-01

申请人： Seung-Han Yoo ,  Dae-Lim Kang ,  Young-Chan Lee

发明人： Seung-Han Yoo ,  Dae-Lim Kang ,  Young-Chan Lee

IPC分类号： H01L21/336 ,  H01L29/78

CPC分类号： H01L29/1033 ,  H01L29/0653 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/66659 ,  H01L29/7833 ,  H01L29/7834 ,  H01L29/7835

摘要： A field effect transistor includes a first substrate region having a channel region and a second substrate region where a heavily doped region is formed. The channel region includes a first portion having a first width and a second portion having a second width larger than the first width. Related fabrication methods are also described.

摘要翻译： 场效应晶体管包括具有沟道区的第一衬底区域和形成重掺杂区的第二衬底区。 沟道区域包括具有第一宽度的第一部分和具有大于第一宽度的第二宽度的第二部分。 还描述了相关的制造方法。

公开(公告)号：US06656142B1

公开(公告)日：2003-12-02

申请号：US10319224

申请日：2002-12-13

申请人： Young-Chan Lee

发明人： Young-Chan Lee

IPC分类号： A61F500

CPC分类号： A61F5/058

摘要： The present invention relates to a splint used for a medical treatment, and in particular to a splint for a medical treatment which is capable of preventing an infection through, a wound by providing an antibacterial treatment to a surface contacting with thee wound based on a good ventilation operation using a non-woven fabric. The medical splint according to the present invention includes an anti-bacteria cover formed of a multiple-cover polypropylene non-woven fabric added with an anti-bacterial agent, a hardening cover which is formed of a polyester added with a moisture hardening agent and includes a plurality of ventilation holes, and an outer cover which is formed of a divided microfiber and includes an attaching means attached to the anti-bacterial cover at an edge portion, wherein said anti-bacterial cover, hardening cover, and outer cover are sequentially formed.

摘要翻译： 本发明涉及一种用于医疗处理的夹板，特别涉及一种能够通过对与伤口接触的表面进行抗菌处理而能够防止伤口感染的医疗用夹板 使用无纺布进行换气操作。 根据本发明的医用夹板包括由添加有抗菌剂的多层聚丙烯无纺布形成的防菌盖，由添加有湿润固化剂的聚酯形成的硬化盖，并且包括 多个通气孔和由分开的超细纤维形成的外盖，并且包括在边缘部分处附接到抗菌罩的附接装置，其中所述防菌盖，硬化盖和外盖依次形成 。