公开(公告)号：US10061148B2

公开(公告)日：2018-08-28

申请号：US15229504

申请日：2016-08-05

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Yun Han ,  Lulu Xie

IPC: G02F1/1333 ,  G02F1/1335 ,  G02F1/1368

CPC classification number: G02F1/133382 ,  G02F1/133308 ,  G02F1/133504 ,  G02F1/133514 ,  G02F1/133528 ,  G02F1/133553 ,  G02F1/133603 ,  G02F1/133606 ,  G02F1/133617 ,  G02F1/1368 ,  G02F2001/133314 ,  G02F2001/133614 ,  G02F2202/36 ,  G02F2203/11

Abstract: A backlight module includes a back plate, a diffuser opposite to the back plate, a plurality of dot light sources arranged on a surface of the backplate facing toward the diffuser in a matrix, thermal emitters configured between the dot light sources, and an optical film configured on the surface of the diffuser facing away the backplate. In addition, the present disclosure also relates to a liquid crystal panel and a liquid crystal device (LCD). The backlight module radiates infrared rays toward the liquid crystal panel, and the liquid crystal within the liquid crystal panel may convert the infrared rays into heat. That is, the absorbed rays may be converted into thermal energy heating up the liquid crystal panel. Thus, even at a low temperature, the LCD may function normally.

公开(公告)号：US10062715B2

公开(公告)日：2018-08-28

申请号：US15327967

申请日：2016-10-10

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Lulu Xie ,  Bin Xiong ,  Yun Han

IPC: H01L29/872 ,  H01L27/12 ,  H05K1/18 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L27/1237 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1259 ,  H01L29/4908 ,  H01L29/66143 ,  H01L29/7391 ,  H01L29/872 ,  H05K1/189 ,  H05K2201/10128

Abstract: A TFT array substrate and its manufacturing method are disclosed. The TFT array substrate includes a substrate having a display area and a non-display area, and at least a Schottky diode on the non-display area. The Schottky diode includes an anode layer and a cathode layer on the substrate, a gate insulation layer on the substrate covering the anode and cathode layers, a first gate on the gate insulation layer covering portions of the anode and cathode layers, an inter-layer insulation layer on the gate insulation layer covering the first gate and having a number of vias exposing the anode and cathode layers, respectively, and a first electrode and a second electrode in the vias on the inter-layer insulation layer connecting the anode and cathode layers, respectively. The present disclosure achieves simplified manufacturing process and reduced cost by forming the Schottky diode simultaneously when the TFT is formed.